22 research outputs found
Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n +-GaAs Schottky barrier on hydrogenation
No full textPhysical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
No full textThe size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R (SH) , R (SK) , rho and geometrical parameter L (T) on the LTLM test line width W-k . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands
Examination of the static pressure of the plasma arc
No full text20.00; Translated from Russian (Problemy Spetsial'noi Elektrometallurgii 1990 v. 6(1) p. 86-88)Available from British Library Document Supply Centre- DSC:9023.19(VR-Trans--4550)T / BLDSC - British Library Document Supply CentreSIGLEGBUnited Kingdo
Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic
No full textMethod to determine the interface’s fractal dimensions of metal-semiconductor electric contacts from their static instrumental characteristics
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Influence of SiO2 protective films on the diffusion of atomic hydrogen during the hydrogenation of epitaxial n-GaAs
No full textFractal geometry of the surface potential in electrochemically deposited platinum and palladium films
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Physicochemical properties of the surface and near-surface region of epitaxial n-GaAs layers modified by atomic hydrogen
No full text
