BabyStories: Can Reinforcement Learning Teach Baby Language Models to Write Better Stories?

Language models have seen significant growth in the size of their corpus, leading to notable performance improvements. Yet, there has been limited progress in developing models that handle smaller, more human-like datasets. As part of the BabyLM shared task, this study explores the impact of reinforcement learning from human feedback (RLHF) on language models pretrained from scratch with a limited training corpus. Comparing two GPT-2 variants, the larger model performs better in storytelling tasks after RLHF fine-tuning. These findings suggest that RLHF techniques may be more advantageous for larger models due to their higher learning and adaptation capacity, though more experiments are needed to confirm this finding. These insights highlight the potential benefits of RLHF fine-tuning for language models within limited data, enhancing their ability to maintain narrative focus and coherence while adhering better to initial instructions in storytelling tasks. The code for this work is publicly at https://github.com/Zephyr1022/BabyStories-UTSA.Comment: Accepted to BabyLM workshop at CoNL

Gallium/aluminum interdiffusion between n-GaN and sapphire

The distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10-13 cm2s-1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DA1 approximately equal to 4.8×10-15 cm2s-1, was observed in the film. © 1998 American Institute of Physics.published_or_final_versio

Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.published_or_final_versio

Preparation of Semi-Insulating Material by Annealing Undoped InP

Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930 ℃ for 80h. The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP). The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer. However, PP-SI InP wafers exhibit poor uniformity and electrical parameters, Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP. Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient. The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI-undoped SI InP. The formation mechanism of deep defects in annealed undoped InP is discussed

Electrical Transport Properties of Annealed Undoped InP

The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, receptively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current

CRISPR/Cas9-based Genome Editing in Pseudomonas aeruginosa and Cytidine Deaminase-Mediated Base Editing in Pseudomonas Species

Summary: Pseudomonas species are a large class of gram-negative bacteria that exhibit significant biomedical, ecological, and industrial importance. Despite the extensive research and wide applications, genetic manipulation in Pseudomonas species, in particular in the major human pathogen Pseudomonas aeruginosa, remains a laborious endeavor. Here we report the development of a genome editing method pCasPA/pACRISPR by harnessing the CRISPR/Cas9 and the phage λ-Red recombination systems. The method allows for efficient and scarless genetic manipulation in P. aeruginosa. By engineering the fusion of the cytidine deaminase APOBEC1 and the Cas9 nickase, we further develop a base editing system pnCasPA-BEC, which enables highly efficient gene inactivation and point mutations in a variety of Pseudomonas species, such as P. aeruginosa, Pseudomonas putida, Pseudomonas fluorescens, and Pseudomonas syringae. Application of the two genome editing methods will dramatically accelerate a wide variety of investigations, such as bacterial physiology study, drug target exploration, and metabolic engineering. : Genetics; Microbial Genetics; Biotechnology; Genetic Engineering Subject Areas: Genetics, Microbial Genetics, Biotechnology, Genetic Engineerin

Transition-Metal-Free Stereospecific Cross-Coupling with Alkenylboronic Acids as Nucleophiles

We herein report a transition-metal-free cross-coupling between secondary alkyl halides/mesylates and aryl/alkenylboronic acid, providing expedited access to a series of nonchiral/chiral coupling products in moderate to good yields. Stereospecific S_N2-type coupling is developed for the first time with alkenylboronic acids as pure nucleophiles, offering an attractive alternative to the stereospecific transition-metal-catalyzed C­(sp²)–C­(sp³) cross-coupling

Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented