29 research outputs found
Effects of temperatures and carbon dioxide nanobubbles on superior electric storage for anodically oxidized films of AlY10 amorphous alloy
Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals
Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs
Amorphous titanium-oxide supercapacitors with high capacitance
An amorphous titanium-oxide film oxidized anodically on amorphous Ti–10at%V–15at%Si alloy ribbons demonstrated excellent electric properties. Specifically, it showed a remarkable increase in parallel capacitance Cp, series capacitance Cs, time constant RCs, and decrease in the dielectric loss with decreasing frequency. The oblate semicircle after a semicircle with a Warburg region in the Nyquist diagram and rapid increases in the real impedance in the low-frequency region in the Bode diagram demonstrated a parallel circuit comprising an electric transport resistance Re (0.64 MΩ), and a high electric double-layer capacitance Cdl (604.0 μF/cm 2) at a nanometer-sized ( in convex size) uneven surface between an upper (Ti0.84V0.11Si0.05)O1.655 layer approximately 45-nm deep and air. The superior capacitances could be elucidated by electrostatic induction of a large positive charge to the uneven oxide surface based on the electronic conduction state derived from TiO2/VO2 nanostructural interfaces in the upper oxide layer
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H 2 Plasma
In order to flatten any crystal orientation Si surface including Sifin-structure and to introduce the flattening process just before the gate oxide formation in the latest LSI manufacturing process, it is strongly required that the flattening process is carried out at lower temperature. By introducing Xe/H 2 plasma flattening at 400 o C just before the gate oxide formation, the breakdown field intensity (E bd ) was improved and E bd fluctuation became much smaller than that of conventional
Analysis of Optical Waveguide Mode in Closely-Stacked InAs/GaAs Quantum Dot Semiconductor Optical Amplifiers
Statistical Analysis of Threshold Voltage Variation Using MOSFETs With Asymmetric Source and Drain
CFD Benchmark Tests for Indoor Environmental Problems: Part 2 Cross-Ventilation Airflows and Floor Heating Systems
Commercial Computational Fluid Dynamics (CFD) software is practically applied in indoor environmental design recent years but the prediction accuracy of CFD simulation depends on the understanding for the fundamentals of fluid dynamics and the setting of appropriate boundary and numerical conditions as well. Additionally, deeper understanding to a specific problem regarding indoor environment is also requested. The series of this study aimed to provide with the practical information such as prediction accuracy and problematic areas related to CFD applications in indoor environment, air conditioning and ventilation, then performed benchmark tests and reported the results. In this Part 2, benchmark test results for cross-ventilation airflows and floor heating systems were introduced.
The highest reproducibility of the predicted results compared with the wind tunnel results occurred when the Z0-type wall function was used as the floor-surface boundary condition and the SST k–ω for the turbulence model in case of cross-ventilation flow and SST k–ω model showed also the closest matching results with experiment in case of natural convection in a room with floor heating