Misdiagnosis of Anterior Superior Pancreaticoduodenal Artery Aneurysm Rupture Likely Due to Segmental Arterial Mediolysis: A Case Report

An aneurysm of the abdominal internal organs is relatively rare. Recently, segmental arterial mediolysis (SAM) and median arcuate ligament syndrome (MALS) were identified as specific causes for aneurysms of the pancreaticoduodenal artery arcade. Herein, we report a ruptured anterior superior pancreaticoduodenal artery (ASPDA) aneurysm due to SAM that was misdiagnosed as acute pancreatitis. The patient was a 59-year-old male with acute, severe, and sharp pain in the upper abdomen. He was clinically diagnosed with acute pancreatitis based on abdominal computed tomography (CT). However, a follow-up CT scan revealed an aneurysm of the ASPDA. We therefore diagnosed this case as retroperitoneal hemorrhage due to aneurysm rupture, and we performed an angiogram and transcatheter arterial embolization to prevent aneurysm re-rupture. Based on a subsequent review of all the findings for this patient, we retrospectively determined the cause of the ASPDA aneurysm to be SAM. Such case reports are rare, and further accumulation of similar cases is necessary in the near future to establish proper diagnostic criteria and appropriate treatment protocols

Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE

A GaP nanowire is promising from the viewpoint of device applications because when its crystal phase is changed from zinc blende (ZB) to wurtzite (WZ), its band gap changes from indirect to direct. GaP in the WZ phase is theoretically and experimentally shown to have the possibility of "green" emission. Here we report on the growth of WZ GaP in InP/GaP core-shell nanowires by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). WZ InP nanowires were used as a template for transferring the WZ structure to GaP. Transmission electron microscopy revealed that WZ GaP was grown on the sidewalls of the InP core in the lateral direction and that ZB GaP was grown on the top of the le core in the axial A direction. A growth model for the different crystal structures of the GaP shell is proposed from the viewpoint of the growth direction. The WZ structure is "transferred" from the InP core to the GaP shell only when GaP grows in the direction perpendicular to the WZ stacking direction of the InP core. This so-called "crystal structure transfer" can also be applied to p- and n-doped GaP and is therefore promising for fabricating WZ-GaP-basecl light-emitting diodes. (C) 2014 Elsevier B.V. All rights reserved

Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures

We report on the selective-area growth and characterization of wurtzite (WZ) InP/AlGaP core–multishell nanowires. Quantum well (QW) structures were fabricated in AlGaP multishells by changing the alloy composition. Transmission electron microscopy revealed that the AlGaP multishells were grown with a WZ structure on the side of the WZ InP core. The lattice constants of the WZ InP core and WZ AlGaP shell were determined by X-ray diffraction. Cathodoluminescence studies showed that the WZ AlGaP QW with an Al composition of 20% exhibited green emissions at 2.37 eV. These results open the possibility of fabricating green light-emitting diodes using WZ AlGaP-based materials

Evaluation of Power Control System for Micro and Nano Satellites by Hardware-in-the-Loop Simulator

The evaluation method using Hardware in the Loop (HIL) simulator of power control system for micro and nano satellites is suggested. The results for two satellite projects, which are RISING-2 and RAIKO, are described. The generation power by solar panels and the consuming power by electrical units are supplied or consumed by external instruments. The power-related status data of real satellite are measured via the downlink. As a dummy satellite, satellite simulation software is simultaneously executed, and the status data are compared to ones of real satellite for updating the math models. Through this method, the power environment on orbit can be simulated in a long-term span, and the healthiness of electrical system can be sufficiently evaluated in a ground test