Low-cost semiconductor swept source laser for near-infrared Optical Coherence Tomography

A low-cost swept source laser operating at 850 nm has been fabricated using an optical lithography process. The laser is monolithically integrable without a need for any regrowth step. Initial characterization has confirmed the high quality of the slot geometry and stable single mode operation

Tunable semiconductor slotted lasers for near-infrared optical coherence tomography

The use of Optical Coherence Tomography in the field of clinical diagnosis is significant. There are different types of swept source lasers available on the market today, however, their design and associated complex fabrication process increase their cost. In the work presented here, an economical six-section slotted tunable laser operating near 850 nm has been designed and fabricated using a UV optical lithography process. The laser is monolithically integrable without a need for any regrowth step. Initial characterization has confirmed the high quality of the slot geometry and stable single mode operation within its tuning range

Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.(DOI: 10.1063/1.2823589

Delay Induced Excitability

We analyse the stochastic dynamics of a bistable system under the influence of time-delayed feedback. Assuming an asymmetric potential, we show the existence of a regime in which the systems dynamic displays excitability by calculating the relevant residence time distributions and correlation times. Experimentally we then observe this behaviour in the polarization dynamics of a vertical cavity surface emitting laser with opto-electronic feedback. Extending these observations to two-dimensional systems with dispersive coupling we finally show numerically that delay induced excitability can lead to the appearance of propagating wave-fronts and spirals.Comment: 5 pages, 6 figure

Intradot dynamics of InAs quantum dot based electroabsorbers

The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3106633

Refractive index dynamics of InAs/GaAs quantum dots

The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4813472

Single-mode interband cascade laser with a slotted waveguide

The design of a single-mode interband cascade laser (ICL) using a slotted waveguide is presented. This technique was explored as an inexpensive alternative to distributed feedback lasers since standard photolithography can be used in fabrication and complex techniques, such as e-beam lithography, re-growth steps, and/or metal gratings, can be avoided. The design of slotted waveguides must be carefully simulated before fabrication to ensure the efficacy of the photolithography masks with each ICL growth. Limitations and the behavior of key design parameters are discussed. Single-mode emission was achieved for certain temperature and injected current conditions, validating the operation of an Sb based slotted laser. The slotted ICLs were emitting from a single longitudinal mode at 3.5 μm and 2 mW of power per facet output at 20 °C with threshold currents around 80 mA

Pump dependence of the dynamics of quantum dot based waveguide absorbers

The nonlinear two stage recovery of quantum dot based reverse-biased waveguide absorbers is investigated experimentally and analytically as a function of the initial ground state occupation probability of the dot. The latter is controlled experimentally by the pump pulse power. The slow stage of the recovery is exponential and its basic timescale is independent of pump power. The fast stage of the recovery is a logistic function which we analyze in detail. The relative strength of slow to fast components is highlighted and the importance of higher order absorption processes at the highest pump level is demonstrated. © 2012 American Institute of Physics.SCOPUS: ar.jinfo:eu-repo/semantics/publishe

The fast recovery dynamics of a quantum dot semiconductor optical amplifier

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Intradot dynamics of InAs based, quantum dot electroabsorbers

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