Robust Extraction of Hyperbolic Metamaterial Permittivity Using Total Internal Reflection Ellipsometry

Hyperbolic metamaterials are optical materials characterized by highly anisotropic effective permittivity tensor components having opposite signs along orthogonal directions. The techniques currently employed for characterizing the optical properties of hyperbolic metamaterials are limited in their capability for robust extraction of the complex permittivity tensor. Here we demonstrate how an ellipsometry technique based on total internal reflection can be leveraged to extract the permittivity of hyperbolic metamaterials with improved robustness and accuracy. By enhancing the interaction of light with the metamaterial stacks, improved ellipsometric sensitivity for subsequent permittivity extraction is obtained. The technique does not require any modification of the hyperbolic metamaterial sample or sophisticated ellipsometry setup and could therefore serve as a reliable and easy-to-adopt technique for characterization of a broad class of anisotropic metamaterials

Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Memristive Devices

Solid-state devices made from correlated oxides, such as perovskite nickelates, are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3, H-NNO), devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveils a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in situ X-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential for the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function