Analysis and Design of a High-Order Discrete-Time Passive IIR Low-Pass Filter

In this paper, we propose a discrete-time IIR low-pass filter that achieves a high-order of filtering through a charge-sharing rotation. Its sampling rate is then multiplied through pipelining. The first stage of the filter can operate in either a voltage-sampling or charge-sampling mode. It uses switches, capacitors and a simple gm-cell, rather than opamps, thus being compatible with digital nanoscale technology. In the voltage-sampling mode, the gm-cell is bypassed so the filter is fully passive. A 7th-order filter prototype operating at 800 MS/s sampling rate is implemented in TSMC 65 nm CMOS. Bandwidth of this filter is programmable between 400 kHz to 30 MHz with 100 dB maximum stop-band rejection. Its IIP3 is +21 dBm and the averaged spot noise is 4.57 nV/\surd Hz. It consumes 2 mW at 1.2 V and occupies 0.42 mm2.European Research Counci

Analysis and Design of I/Q Charge-Sharing Band-Pass-Filter for Superheterodyne Receivers

A complex quadrature charge-sharing (CS) technique is proposed to implement a discrete-time band-pass filter (BPF) with a programmable bandwidth of 20-100 MHz. The BPF is part of a cellular superheterodyne receiver and completely determines the receiver frequency selectivity. It operates at the full sampling rate of up to 5.2 GHz corresponding to the 1.2 GHz RF input frequency, thus making it free from any aliasing or replicas in its transfer function. Furthermore, the advantage of CS-BPF over other band-pass filters such as N-path, active-RC, Gm-C, and biquad is described. A mathematical noise analysis of the CS-BPF and the comparison of simulations and calculations are presented. The entire 65 nm CMOS receiver, which does not include a front-end LNTA for test reasons, achieves a total gain of 35 dB, IRN of 1.5 nV/√(Hz), out-of-band IIP3 of +10 dBm. It consumes 24 mA at 1.2 V power supply.European Research Counci

Analysis and Design of a Multi-Core Oscillator for Ultra-Low Phase Noise

In this paper, we exploit an idea of coupling multiple oscillators to reduce phase noise (PN) to beyond the limit of what has been practically achievable so far in a bulk CMOS technology. We then apply it to demonstrate for the first time an RF oscillator that meets the most stringent PN requirements of cellular basestation receivers while abiding by the process technology reliability rules. The oscillator is realized in digital 65-nm CMOS as a dualcore LC-tank oscillator based on a high-swing class-C topology. It is tunable within 4.07-4.91 GHz, while drawing 39-59 mA from a 2.15 V power supply. The measured PN is -146.7 dBc/Hz and -163.1 dBc/Hz at 3 MHz and 20 MHz offset, respectively, from a 4.07 GHz carrier, which makes it the lowest reported normalized PN of an integrated CMOS oscillator. Straightforward expressions for PN and interconnect resistance between the cores are derived and verified against circuit simulations and measurements. Analysis and simulations show that the interconnect resistance is not critical even with a 1% mismatch between the cores. This approach can be extended to a higher number of cores and achieve an arbitrary reduction in PN at the cost of the power and area.European Research Counci

Toward Solving Multichannel RF-SoC Integration Issues Through Digital Fractional Division

In modern RF system on chips (SoCs), the digital content consumes up to 85% of the IC chip area. The recent push to integrate multiple RF-SoC cores is met with heavy resistance by the remaining RF/analog circuitry, which creates numerous strong aggressors and weak victims leading to RF performance degradation. A key such mechanism is injection pulling through parasitic coupling between various LC-tank oscillators as well as between them and strong transmitter (TX) outputs. Any static or dynamic frequency proximity between aggressors (i.e., oscillators and TX outputs) and victims (i.e., oscillators) that share the same die causes injection pulling, which produces unwanted spurs and/or modulation distortion. In this paper, we propose and demonstrate a new frequency planning technique of a multicore TX where each LC -tank oscillator is separated from other aggressors beyond its pulling range. This is done by breaking the integer harmonic frequency relationship of victims/aggressors within and between the RF transmission channels using digital fractional divider based on a phase rotation. Each oscillator's center frequency can be fractionally separated by ~28% but, at the same time, both producing closely spaced frequencies at the phase rotator outputs. The injection-pulling spurs are so far away that they are insignificantly small (-80 dBc) and coincide with the second harmonic of the carrier. This method is experimentally verified in a two-channel system in 65-nm digital CMOS, each channel comprising a high-swing class-C oscillator, frequency divider, and phase rotator.European Research Counci

A TDD/FDD SAW-less superheterodyne receiver with blocker-resilient band-pass filter and multi-stage HR in 28nm CMOS

IEEE 2015 Symposium on VLSI Circuits (VLSI), Kyoto, Japan, 17 -19 June 2015A SAW-less discrete-time superheterodyne receiver (RX) with multi-stage harmonic rejection in 28nm CMOS, featuring highly linear LNTA, employs a novel blocker-resilient octal charge-sharing band-pass filter to achieve low power consumption. The RX features NF of 2.1 to 2.6dB, and IIP3 of 8 to 14 dBm, while drawing only 24 to 37 mW in different operation modes.M4S/Hisilicon, Leuven, Belgiu