Comparison of short and long training paradigms.

*<p>Total time does not include the day of rest between training and probe phases.</p

Barnes maze diagram with quadrants.

<p>The Barnes maze is made up of a circular platform, 48” in diameter, with 20 equally spaced holes around the periphery. The holes are 1” away from the edge and have a 1.75” diameter. The maze is divided into 4 quadrants labeled Target, Positive, Opposite, and Negative with the escape hole being in the center of the Target quadrant.</p

Ion Dynamics at the Intermediate Charging State of the Sodium Vanadium Fluorophosphate Cathode

Na super ionic conductor (NASICON)-type polyanionic vanadium fluorophosphate Na3V2O2(PO4)2F (NVOPF) is a promising cathode material for high-energy sodium-ion batteries. The dynamic diffusion and exchange of sodium ions in the lattice of NVOPF are crucial for its electrochemical performance. However, standard characterizations are mostly focused on the as-synthesized material without cycling, which is different from the actual battery operation conditions. In this work, we investigated the hopping processes of sodium in NVOPF at the intermediate charging state with 23Na solid-state nuclear magnetic resonance (ssNMR) and density functional theory (DFT) calculations. Our experimental characterizations revealed six distinct sodium coordination sites in the intermediate structure and determined the exchange rates among these sites at variable temperatures. The theoretical calculations showed that these dynamic processes correspond to different ion transport pathways in the crystalline lattice. Our combined experimental and theoretical study uncovered the underlying mechanisms of the ion transport in cycled NVOPF and these understandings may help the optimization of cathode materials for sodium-ion batteries

Percent of mice being guided to escape hole on training days decreased with training.

<p>Percent of mice being manually guided to the escape hole that did not independently enter in the allotted 2: trials 1–5, 6–10, and 11–15. *<i>p</i><0.05, **<i>p</i><0.01, ***<i>p</i><0.001, ****<i>p</i><0.0001 compare WT and 3×Tg.</p

Primary latency of training trials shows group differences only in first 4 trials.

<p>A) Primary latency, out of 120 s, for 15-m old wild-type (WT) or triple transgenic (3×Tg) mice receiving 15 training trials (WT n = 32, 3×Tg n = 24). Mean and median values given for comparison. Primary latency over 5 training trials for 15-m old (B; WT n = 15, 3×Tg n = 15) and 4-m old (C; WT n = 14, 3×Tg n = 17) mice. *<i>p</i><0.05, **<i>p</i><0.01 compare mean values of WT and 3×Tg.</p

Percent holes searched and time in target quadrant show short training can resolve cognitive deficits.

<p>A) Percent holes searched, on probe day, in each of four quadrants by 15-m old wild-type or triple transgenic mice receiving either short or long training. Chance level of holes searched in each quadrant is 25%. B) Time (s) spent in the Target quadrant by all 6 groups of mice. Chance amount of time spent per quadrant is 30 s out of 120 s. C) Percent holes searched in each of four quadrants by WT or TG and 15-m or 4-m old mice receiving short training. *<i>p</i><0.05, ***<i>p</i>≦0.001 compare WT and 3×Tg.</p

Significant Enhancement of Optoelectronic Properties in CuInP₂S₆ via Pressure-Induced Structural Phase Transition

Quaternary layered transition metal thiophosphate CuInP2S6 (CIPS) has attracted extensive research interest because of its outstanding optical and ferroelectric properties. Pressure-tuned phase transition is an efficient method to regulate the properties of functional materials in situ, yet there is still much to explore. Herein, we studied the pressure-regulated optoelectronic properties of CIPS and found a four-stage evolution of photoresponsivity under compression. The photoresponse of CIPS barely changes with pressure initially but increases dramatically above 4.2 GPa. Under further compression, the photoresponse first shows a decrease above 7.5 GPa and then a significant increase up to 23.5 GPa. Remarkably, the photoresponse at the highest pressure enhances by two orders of magnitude compared with the starting value. To investigate the origin of these abnormal variations in CIPS, high-pressure UV–vis absorption, Raman, and XRD measurements were conducted and a phase transition from Cc to P3̅1m symmetry was found at approximately 4.0 GPa. We suggest that the pressure-modulated optoelectronic properties in CIPS are closely related to the conductivity change of CIPS caused by its structural phase transition. Our study spotlights the outstanding pressure regulation of optoelectronic properties in CIPS, which paves the way for modifying the behavior of other optoelectronic materials