1 research outputs found
Role of Carbon Nanotube Interlayer in Enhancing the Electron Field Emission Behavior of Ultrananocrystalline Diamond Coated Si-Tip Arrays
We
improved the electron field emission properties of ultrananocrystalline
diamond (UNCD) films grown on Si-tip arrays by using the carbon nanotubes
(CNTs) as interlayer and post-treating the films in CH<sub>4</sub>/Ar/H<sub>2</sub> plasma. The use of CNTs interlayer effectively
suppresses the presence of amorphous carbon in the diamond-to-Si interface
that enhances the transport of electrons from Si, across the interface,
to diamond. The post-treatment process results in hybrid-granular-structured
diamond (HiD) films via the induction of the coalescence of the ultrasmall
grains in these films that enhanced the conductivity of the films.
All these factors contribute toward the enhancement of the electron
field emission (EFE) process for the HiD<sub>CNT/Si‑tip</sub> emitters,
with low turn-on field of <i>E</i><sub>0</sub> = 2.98 V/μm
and a large current density of 1.68 mA/cm<sup>2</sup> at an applied
field of 5.0 V/μm. The EFE lifetime stability under an operation
current of 6.5 μA was improved substantially to τ<sub>HiD/CNT/Si‑tip</sub> = 365 min. Interestingly, these HiD<sub>CNT/Si‑tip</sub> materials also show enhanced plasma illumination behavior, as well
as improved robustness against plasma ion bombardment when they are
used as the cathode for microplasma devices. The study concludes that
the use of CNT interlayers not only increase the potential of these
materials as good EFE emitters, but also prove themselves to be good
microplasma devices with improved performance