Random restricted partitions

We study two types of probability measures on the set of integer partitions of $n$ with at most $m$ parts. The first one chooses the random partition with a chance related to its largest part only. We then obtain the limiting distributions of all of the parts together and that of the largest part as $n$ tends to infinity while $m$ is fixed or tends to infinity. In particular, if $m$ goes to infinity not fast enough, the largest part satisfies the central limit theorem. The second measure is very general. It includes the Dirichlet distribution and the uniform distribution as special cases. We derive the asymptotic distributions of the parts jointly and that of the largest part by taking limit of $n$ and $m$ in the same manner as that in the first probability measure.Comment: 32 page

Manufacture of Granular Polysilicon from Trichlorosilane in an Internally Circulating Fluidized Bed Reactor

A lab scale internally circulating fluidized bed (ICFB) with a centrally located draft tube was designed to make polysilicon from trichlorosilane. Experimental results and evaluations showed that particle circulation could carry enough heat for reaction and effectively decrease wall deposition. Well grown granular polysilicon was obtained in a stable fluidization state and particle circulation rate

The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material

The potentials of Sn, In, or Al doped ZnSb thin film as candidates for phase change materials have been studied in this paper. It was found that the Zn-Sb bonds were broken by the addition of the dopants and homopolar Zn-Zn bonds and other heteropolar bonds, such as Sn-Sb, In-Sb, and Al-Sb, were subsequently formed. The existence of homopolar Sn-Sn and In-In bonds in Zn₅₀Sb₃₆Sn₁₄ and Zn₄₁Sb₃₆In₂₃ films, but no any Al-Al bonds in Zn₃₅Sb₃₀Al₃₅ film, was confirmed. All these three amorphous films crystallize with the appearance of crystalline rhombohedral Sb phase, and Zn₃₅Sb₃₅Al₃₅ film even exhibits a second crystallization process where the crystalline AlSb phase is separated out. The Zn₃₅Sb₃₀Al₃₅ film exhibits a reversible phase change behavior with a larger Ea ( 4.7 eV), higher Tc (~ 245ᴼ C), better 10-yr data retention (~ 182ᴼ C), less incubation time (20 ns at 70 mW), and faster complete crystallization speed (45 ns at 70 mW). Moreover, Zn₃₅Sb₃₀Al₃₅ film shows the smaller root-mean-square (1.654 nm) and less change of the thickness between amorphous and crystalline state (7.5%), which are in favor of improving the reliability of phase change memory.This work was financially supported by the Natural Science Foundation of China (Grant Nos. 61306147, 61377061), the Public Project of Zhejiang Province (Grant No.2014C31146), the Young Leaders of academic climbing project of the Education Department of Zhejiang Province (pd2013092), the Natural Science Foundation of Zhejiang Province (Grant No. LQ15F040002), the Scientific Research Foundation of Graduate School of Ningbo University, and sponsored by K. C. Wong Magna Fund in Ningbo University

Research on image processing algorithm of immune colloidal gold test paper detection

In order to better solve the problem of automatic identification of quality control line and detection line in the detection of gold standard test strip, this paper proposes to collect the image information of gold standard test strip after color rendering through CMOS sensor, preprocess the obtained information, transform RGB image into gray image, build cloud model in the CIELAB/HSV/HSL space, and apply the improved AdaBoost algorithm to determine the position of detection line and quality control line Place. Compared with the traditional template matching method, it improves the accuracy and accuracy of recognition

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

This work was financially supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0976), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University

Research on curve smoothing algorithm for diesel indicator diagram

The algorithm of curve smoothing for diesel indicator diagram is introduced, and the concrete implementation process is expounded in detail. First, the multi cyclic mean value operation of indicator diagram data is performed. By probable error of calculating indicator diagram data, if probable error is greater than a specific value, and the predicted value is used instead of the singular point data. The average operation of the indicator diagram data is processed again. Finally, the five-point cubic smoothing method is used to smooth the indicator curve, and the smooth, continuous and gradual indicator diagram curve is obtained. The experiments show that the algorithm described in the paper can effectively filter the noise of cylinder pressure signal, and obtain a smooth indicator diagram curve, which verifies the effectiveness of the algorithm described in the paper

Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application

Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn x (Sb₂Te)1−x films and be almost linearly with the wide range of Zn-doping concentration from x = 0 to 29.67 at.%. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn 26.07 (Sb₂Te)73.93 and Zn 29.67 (Sb₂Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb₂Te crystalline grains

Glass formation and properties of Ge-Ga-Te-ZnI2 far infrared chalcohalide glasses

International audienceIn order to develop novel far infrared window material, a series of Ge-Ga-Te-ZnI2 chalcohalide glasses were prepared by traditional melt-quenching method and their glass-forming region was determined also. Here, some measurements including X-ray diffraction (XRD), differential thermal analysis (DTA), UV-Vis-NIR absorption spectrum, and infrared optical transmission spectra were carried out. The allowed indirect transition optical band gap was calculated according to the classical Tauc equation. The results show that with the addition of ZnI2, the glass-forming ability and thermal stability are improved gradually. With the contents of ZnI2 increased from 5 to 20 at.%, continued blue-shifting occurs in the cutting-off absorption edge of short-wavelength and the values of indirect optical band gaps were observed with ranges from 0.596 to 0.626 eV in these glasses. These GeTe4.3-GaTe3-ZnI2 glasses show wide optical transmission and the infrared cut-off wavelengths are larger than 25 μm, which implies that the Ge-Ga-Te-ZnI2 chalcogenide glasses possess the potential of far-IR optical window applications