Optical and electrical characterization of CuO/ZnO heterojunctions

CuO/ZnO p-n heterojunctions are fabricated on ZnO nanorod arrays by sputtering of metallic Cu thin films and by their subsequent thermal annealing at 400 °C. Structural, morphological, and optical properties of both copper oxide nanocrystalline films and zinc oxide nanorod arrays are discussed with the emphasis on the electrical junction properties investigated by current–voltage and impedance spectroscopy measurements. Electrical characteristics of these junctions are sensitive to gas mixtures with a low hydrogen concentration and show fast response and recovery time. The copper oxide/zinc oxide heterojunctions are shown to be more efficient to hydrogen detection at room temperature in comparison with the resistivity sensors based on zinc or copper oxides

Enhancement of carrier mobility in thin Ge layer by Sn co-doping

We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology. This is an author-created, un-copyedited version of an article accepted for publication/published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0268-1242/31/10/10501