6,957 research outputs found

    Entanglement of two atomic samples by quantum non-demolition measurements

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    This paper presents simulations of the state vector dynamics for a pair of atomic samples which are being probed by phase shift measurements on an optical beam passing through both samples. We show how measurements, which are sensitive to different atomic components, serve to prepare states which are close to being maximally entangled.Comment: 8 pages, 8 figures, REVTeX

    Probing impulsive strain propagation with x-ray pulses

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    Pump-probe time-resolved x-ray diffraction of allowed and nearly forbidden reflections in InSb is used to follow the propagation of a coherent acoustic pulse generated by ultrafast laser-excitation. The surface and bulk components of the strain could be simultaneously measured due to the large x-ray penetration depth. Comparison of the experimental data with dynamical diffraction simulations suggests that the conventional model for impulsively generated strain underestimates the partitioning of energy into coherent modes.Comment: 4 pages, 2 figures, LaTeX, eps. Accepted for publication in Phys. Rev. Lett. http://prl.aps.or

    Raman imaging and electronic properties of graphene

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    Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 μ\mum at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate
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