19 research outputs found

    Inverse design and implementation of a wavelength demultiplexing grating coupler

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    Nanophotonics has emerged as a powerful tool for manipulating light on chips. Almost all of today's devices, however, have been designed using slow and ineffective brute-force search methods, leading in many cases to limited device performance. In this article, we provide a complete demonstration of our recently proposed inverse design technique, wherein the user specifies design constraints in the form of target fields rather than a dielectric constant profile, and in particular we use this method to demonstrate a new demultiplexing grating. The novel grating, which has not been developed using conventional techniques, accepts a vertical-incident Gaussian beam from a free-space and separates O-band (1300nm)(1300\mathrm{nm}) and C-band (1550nm)(1550\mathrm{nm}) light into separate waveguides. This inverse design concept is simple and extendable to a broad class of highly compact devices including frequency splitters, mode converters, and spatial mode multiplexers.Comment: 17 pages, 4 figures, 1 table. A supplementary section describing the inverse-design algorithm in detail has been added, in addition to minor corrections and updated reference

    Single Color Centers Implanted in Diamond Nanostructures

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    The development of materials processing techniques for optical diamond nanostructures containing a single color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20nm) to generate Nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal. Individual NV centers are then isolated mechanically by dry etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1\mu m) implantation of individual NV centers into pre-fabricated diamond nanowire. The high single photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allows us to sustain strong photon anti-bunching even at high pump powers.Comment: 20 pages, 7 figure

    Hybrid metal-dielectric nanocavity for enhanced light-matter interactions

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    Despite tremendous advances in the fundamentals and applications of cavity quantum electrodynamics (CQED), investigations in this field have primarily been limited to optical cavities composed of purely dielectric materials. Here, we demonstrate a hybrid metal-dielectric nanocavity design and realize it in the InAs/GaAs quantum photonics platform utilizing angled rotational metal evaporation. Key features of our nanometallic light-matter interface include: (i) order of magnitude reduction in mode volume compared to that of leading photonic crystal CQED systems; (ii) surface-emitting nanoscale cylindrical geometry and therefore good collection efficiency; and finally (iii) strong and broadband spontaneous emission rate enhancement (Purcell factor textasciitilde 8) of single photons. This light-matter interface may play an important role in quantum technologies

    Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

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    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV^-) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV^- color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV^- on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV^- centers. Scanning confocal photoluminescence measurements reveal optically active SiV^- lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV^- lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV^- centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing

    Enhanced Single Photon Emission from a Diamond-Silver Aperture

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    We have developed a scalable method for coupling single color centers in diamond to plasmonic resonators and demonstrated Purcell enhancement of the single photon emission rate of nitrogen-vacancy (NV) centers. Our structures consist of single nitrogen-vacancy (NV) center-containing diamond nanoposts embedded in a thin silver film. We have utilized the strong plasmon resonances in the diamond-silver apertures to enhance the spontaneous emission of the enclosed dipole. The devices were realized by a combination of ion implantation and top-down nanofabrication techniques, which have enabled deterministic coupling between single NV centers and the plasmonic modes for multiple devices in parallel. The plasmon-enhanced NV centers exhibited over six-fold improvements in spontaneous emission rate in comparison to bare nanoposts and up to a factor of 3.6 in radiative lifetime reduction over bulk samples, with comparable increases in photon counts. The hybrid diamond-plasmon system presented here could provide a stable platform for the implementation of diamond-based quantum information processing and magnetometry schemes.Comment: 16 pages, 4 figure

    A Diamond Nanowire Single Photon Antenna

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    The development of a robust light source that emits one photon at a time is an outstanding challenge in quantum science and technology. Here, at the transition from many to single photon optical communication systems, fully quantum mechanical effects may be utilized to achieve new capabilities, most notably perfectly secure communication via quantum cryptography. Practical implementations place stringent requirements on the device properties, including stable photon generation, room temperature operation, and efficient extraction of many photons. Single photon light emitting devices based on fluorescent dye molecules, quantum dots, and carbon nanotube material systems have all been explored, but none have simultaneously demonstrated all criteria. Here, we describe the design, fabrication, and characterization of a bright source of single photons consisting of an individual Nitrogen-vacancy color center (NV center) in a diamond nanowire operating in ambient conditions. The nanowire plays a positive role in increasing the number of single photons collected from the NV center by an order of magnitude over devices based on bulk diamond crystals, and allows operation at an order of magnitude lower power levels. This result enables a new class of nanostructured diamond devices for room temperature photonic and quantum information processing applications, and will also impact fields as diverse as biological and chemical sensing, opto-mechanics, and scanning-probe microscopy.Comment: 16 pages, 4 figures, v2: Includes improved reference list; modified figure 1 to show a large array of NW and FDTD simulation of field profile; direct experimental comparsion of several bulk/NW devices in figure
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