Evolution of pseudo-spherical silicon nanocrystals to tetrahedra, mediated by phosphonic acid surfactants.

Silicon nanocrystals were synthesised at high temperatures and high pressures by the thermolysis of diphenylsilane using a combination of supercritical carbon dioxide and phosphonic acid surfactants. Size and shape evolution from pseudo-spherical silicon nanocrystals to well faceted tetrahedral-shaped silicon crystals with edge lengths in the range of 30-400 nm were observed with sequentially decreasing surfactant chain lenghts. The silicon nanocrystals were characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering spectroscopy

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented. Reciprocating sliding tests are performed on micro- and nanocrystalline diamond (MCD, NCD) films with varying B-doping levels and thicknesses. We demonstrate a linear dependency of the wear rate of the different diamond films with the B-doping level. Specifically, the wear rate increases by a factor of 3 between NCD films with 0.6 and 2.8 at. % B-doping levels. This increase in the wear rate can be linked to a 50% decrease in both hardness and elastic modulus of the highly B-doped NCD films, as determined by nanoindentation measurements. Moreover, we show that fine-grained diamond films are more prone to wear. Particularly, NCD films with a 3× smaller grain size but similar B-doping levels exhibit a double wear rate, indicating the crucial role of the grain size on the diamond film wear behavior. On the other hand, MCD films are the most wear-resistant films due to their larger grains and lower B-doping levels. We propose a graphical scheme of the wear behavior which involves planarization and mechanochemically driven amorphization of the surface to describe the wear mechanism of B-doped diamond films. Finally, the wear behavior of the nucleation surface of NCD films is investigated for the first time. In particular, the nucleation surface is shown to be susceptible to higher wear compared to the growth surface due to its higher grain boundary line density

Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)₂/Al₂O₃ Filamentary Switching Devices

In this paper, we report on the use of CuInX₂ (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back-end-of-line in semiconductor industry. When integrated in 580 μm diameter memory cells, more volatile switching was found at low compliance current using CuInS₂ and CuInSe₂ compared to CuInTe₂, which is ascribed to the natural tendency for Cu to diffuse back from the switching layer to the cation supply layer because of the larger difference in electrochemical potential using Se or S. Low-current and scaled behavior was also confirmed using conductive atomic force microscopy. Hence, by varying the chalcogen element, a method is presented to modulate the filament stability