Integrated dual wavelength lasers for millimeter wave generation

We have designed integrated dual-wavelength lasers in which an array waveguide grating is used as intra-cavity filter to allow lasing on two wavelengths within a common arm of the device. The devices have been designed with the purpose to exploit the beating of the two wavelengths on a photodiode in order to generate a 70GHz carrier wave. The use of a common SOA to amplify both wavelengths is promising for reducing the variations in frequency difference between the two operating laser modes. Both linear and ring configuration have been explored

Submicron active-passive integration for InP-based membranes on silicon

The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications

A compact phased array based multi-wavelength laser

A phased-array-based multiwavelength laser with InGaAsP active layer has been fabricated in a simple ridge waveguide structure with nine channels spaced by 400 GHz around 1.55 mu m on an area of 3.5*3*2.5 mm/sup 2/. Simultaneous dual channel operation is demonstrate

Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region

Abstract only

Sub-micrometer active-passive integration for InP-based membranes on silicon

The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited

Sub-micrometer active-passive integration for InP-based membranes on silicon

The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited

Strained-Layer InGaAs(P)/InP Quantum Well Semiconductor Lasers Grown by Organometallic Vapour Phase Epitaxy

Applied Science