8 research outputs found
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A photonic platform for donor spin qubits in silicon
Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-oxide semiconductor compatibility, coherence (T2) times of minutes to hours, and simultaneous initialization, manipulation, and readout fidelities near ~99.9%. This allows for many quantum error correction protocols, which will be essential for scale-up. However, a proven method of reliably coupling spatially separated donor qubits has yet to be identified. We present a scalable silicon-based platform using the unique optical properties of “deep” chalcogen donors. For the prototypical 77Se+ donor, we measure lower bounds on the transition dipole moment and excited-state lifetime, enabling access to the strong coupling limit of cavity quantum electrodynamics using known silicon photonic resonator technology and integrated silicon photonics. We also report relatively strong photon emission from this same transition. These results unlock clear pathways for silicon-based quantum computing, spin-to-photon conversion, photonic memories, integrated single-photon sources, and all-optical switches
High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
The encoding of qubits in semiconductor spin carriers has been recognised as
a promising approach to a commercial quantum computer that can be
lithographically produced and integrated at scale. However, the operation of
the large number of qubits required for advantageous quantum applications will
produce a thermal load exceeding the available cooling power of cryostats at
millikelvin temperatures. As the scale-up accelerates, it becomes imperative to
establish fault-tolerant operation above 1 kelvin, where the cooling power is
orders of magnitude higher. Here, we tune up and operate spin qubits in silicon
above 1 kelvin, with fidelities in the range required for fault-tolerant
operation at such temperatures. We design an algorithmic initialisation
protocol to prepare a pure two-qubit state even when the thermal energy is
substantially above the qubit energies, and incorporate high-fidelity
radio-frequency readout to achieve an initialisation fidelity of 99.34 per
cent. Importantly, we demonstrate a single-qubit Clifford gate fidelity of
99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances
overcome the fundamental limitation that the thermal energy must be well below
the qubit energies for high-fidelity operation to be possible, surmounting a
major obstacle in the pathway to scalable and fault-tolerant quantum
computation
Consistency of high-fidelity two-qubit operations in silicon
The consistency of entangling operations between qubits is essential for the
performance of multi-qubit systems, and is a crucial factor in achieving
fault-tolerant quantum processors. Solid-state platforms are particularly
exposed to inconsistency due to the materials-induced variability of
performance between qubits and the instability of gate fidelities over time.
Here we quantify this consistency for spin qubits, tying it to its physical
origins, while demonstrating sustained and repeatable operation of two-qubit
gates with fidelities above 99% in the technologically important silicon
metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed
study of the stability of these operations by analysing errors and fidelities
in multiple devices through numerous trials and extended periods of operation.
Adopting three different characterisation methods, we measure entangling gate
fidelities ranging from 96.8% to 99.8%. Our analysis tools also identify
physical causes of qubit degradation and offer ways to maintain performance
within tolerance. Furthermore, we investigate the impact of qubit design,
feedback systems, and robust gates on implementing scalable, high-fidelity
control strategies. These results highlight both the capabilities and
challenges for the scaling up of spin-based qubits into full-scale quantum
processors
Electron spin coherence exceeding seconds in high purity silicon
Silicon is undoubtedly one of the most promising semiconductor materials for
spin-based information processing devices. Its highly advanced fabrication
technology facilitates the transition from individual devices to large-scale
processors, and the availability of an isotopically-purified Si form
with no magnetic nuclei overcomes what is a main source of spin decoherence in
many other materials. Nevertheless, the coherence lifetimes of electron spins
in the solid state have typically remained several orders of magnitude lower
than what can be achieved in isolated high-vacuum systems such as trapped ions.
Here we examine electron spin coherence of donors in very pure Si
material, with a residual Si concentration of less than 50 ppm and donor
densities of per cm. We elucidate three separate mechanisms
for spin decoherence, active at different temperatures, and extract a coherence
lifetime up to 2 seconds. In this regime, we find the electron spin is
sensitive to interactions with other donor electron spins separated by ~200 nm.
We apply a magnetic field gradient in order to suppress such interactions and
obtain an extrapolated electron spin of 10 seconds at 1.8 K. These
coherence lifetimes are without peer in the solid state by several orders of
magnitude and comparable with high-vacuum qubits, making electron spins of
donors in silicon ideal components of a quantum computer, or quantum memories
for systems such as superconducting qubits.Comment: 18 pages, 4 figures, supplementary informatio