Partial Group Representations on Semialgebras

Let $A$ be an additively cancellative semialgebra over an additively cancellative semifield $K$ as defined in [9]. For a given partial action $\alpha$ of a group $G$ on an algebra, the associativity of partial skew group ring together with the existence and uniqueness of enveloping (global) action were studied by M. Dokuchaev and R. Exel [2] which were extended for semialgebras with some restriction by Sharma et. al. using the ring of differences. In a similar way, we extend the results of [2,3] for semialgebras regarding partial representations.Comment: PAGE 20-2

Driven Intrinsic Localized Modes in a Coupled Pendulum Array

Intrinsic localized modes (ILMs), also called discrete breathers, are directly generated via modulational instability in an array of coupled pendulums. These ILMs can be stabilized over a range of driver frequencies and amplitudes. They are characterized by a pi-phase difference between their center and wings. At higher driver frequencies, these ILMs are observed to disintegrate via a pulsating instability, and the mechanism of this breather instability is investigated.Comment: 5 pages, 6 figure

Superconducting On-chip Fourier Transform Spectrometer

The kinetic inductance effect is strongly nonlinear with applied current in NbTiN, TiN and NbN thin films. This can be utilized to realize novel devices. We present results from transmission lines made with these materials, where DC (current) control is used to modulate the phase velocity thereby enabling on-chip spectrometers. Utility of such compact spectrometers is discussed, along with their natural connection with parametric amplifiers

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed

Instability through porous medium of two viscous superposed conducting fluids

The stability of the plane interface separating two viscous superposed conducting fluids through porous medium is studied when the whole system is immersed in a uniform horizontal magnetic field. The stability analysis is carried out for two highly viscous fluids of equal kinematic viscosities, for mathematical simplicity. It is found that the stability criterion is independent of the effects of viscosity and porosity of the medium and is dependent on the orientation and magnitude of the magnetic field. The magnetic field is found to stabilize a certain wave number range of the unstable configuration. The behaviour of growth rates with respect to viscosity, porosity and medium permeability are examined analytically