Resonant Raman study of local vibrational modes in AlGaAsN layers

We report on resonant inelastic light scattering in dilute AlGaAsN films. Intense narrow peaks associated to N-related local vibration modes (LVM) have been observed around 325, 385, 400, 450, 500 and 540 cm−1. Their frequencies are compared to density functional theory supercell calculations of AlnGa4−nN complexes (n=1−4). We find clear indications of the formation of Al4N complexes. The values of the extended phonon frequencies reveal changes in the N distribution depending on the growth conditions. The LVM spectra are resonant in the energy range from 1.75 to 1.79 eV, which corresponds to an N-related electronic transition. Our results confirm the preferential bonding of N to Al in AlGaAsN

On the Cut-Off Prescriptions Associated with Power-Law Generalized Thermostatistics

We revisit the cut-off prescriptions which are needed in order to specify completely the form of Tsallis' maximum entropy distributions. For values of the Tsallis entropic parameter $q>1$ we advance an alternative cut-off prescription and discuss some of its basic mathematical properties. As an illustration of the new cut-off prescription we consider in some detail the $q$-generalized quantum distributions which have recently been shown to reproduce various experimental results related to high $T_c$ superconductors

Intensive variables in the framework of the non-extensive thermostatistics

By assuming an appropriate energy composition law between two systems governed by the same non-extensive entropy, we revisit the definitions of temperature and pressure, arising from the zeroth principle of thermodynamics, in a manner consistent with the thermostatistics structure of the theory. We show that the definitions of these quantities are sensitive to the composition law of entropy and internal energy governing the system. In this way, we can clarify some questions raised about the possible introduction of intensive variables in the context of non-extensive statistical mechanics.Comment: 14 pages, elsart style, version accepted on Physics Letters

Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and firstprinciples calculations

The localized vibrational modes associated with substitutional aluminium and nitrogen atoms in AlyGa1−yNxAs1−x have been studied within first-principles density functional theory using a supercell approach. Localized vibrational modes related to N-AlmGa4−m (1≤m≥4) complexes have been identified, which reveal the formation of N-Al4 units well above random abundance, in qualitative agreement with a large calculated value (391 meV) of the Al-N bond formation energy. We determine the resonant Raman-active modes from the selection rule obtained by calculating the electron-phonon coupling strength and optical transition matrix elements and compare them with resonant Raman spectroscopy measurements. The localized modes from Raman scattering measurements with frequencies around 325, 385, 400, 450, 500, and 540 cm−1 are found to be in good agreement with the calculated modes (326, 364, 384, 410, 456, 507, and 556 cm−1). The modes are classified as follows: the two modes at 326 and 556 cm−1 belong to the N-AlGa3 configuration; there are three modes which belong to N-Al2Ga2 with frequencies at 326, 364, and 507 cm−1; the N-Al3Ga configuration gives rise to modes whose frequencies are 384 and 456 cm−1; and the mode at a frequency of 410 cm−1 belongs to the N-Al4 complex. The comparison of line intensities from samples before and after rapid thermal annealing allows us to experimentally distinguish vibrational modes associated with different clusters, in agreement with the theoretical assignments