Reliability Issues with PME and BME Ceramic Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed

Effect of Mechanical Stresses on Characteristics of Chip Tantalum Capacitors

The effect of compressive mechanical stresses on chip solid tantalum capacitors is investigated by monitoring characteristics of different part types under axial and hydrostatic stresses. Depending on part types, an exponential increase of leakage currents was observed when stresses exceeded 10 MPa to 40 MPa. For the first time, reversible variations of leakage currents (up to two orders of magnitude) with stress have been demonstrated. Mechanical stresses did not cause significant changes of AC characteristics of the capacitors, whereas breakdown voltages measured during the surge current testing decreased substantially indicating an increased probability of failures of stressed capacitors in low impedance applications. Variations of leakage currents are explained by a combination of two mechanisms: stress-induced scintillations and stress-induced generation of electron traps in the tantalum pentoxide dielectric

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed

2015 NEPP Tasks Update for Ceramic and Tantalum Capacitors

This presentation provides a NASA Electronic Parts and Packaging (NEPP) program update on tantalum and ceramic capacitors

Anomalous Transients in Chip Polymer Tantalum Capacitors

Contrary to MnO2 tantalum capacitors, transient processes in polymer tantalum capacitors after voltage application might result in anomalously high, ampere-level currents when a capacitor might appear as a short circuit for a time that is much greater than a transient time in MnO2 capacitors. In this work, conditions that cause anomalous transients in different types of polymer tantalum capacitors have been analyzed. Related phenomena that included increasing of capacitance and dissipation factors with voltage, parametric surge current test failures without damage to capacitors, and increasing leakage currents at low temperatures are described. It has been shown that anomalous transients increased substantially with applied voltage and with reduction of moisture content in capacitors caused by storage or operation at high temperatures and/or in vacuum. Different types of capacitors exhibited different level of transients and modification of conductive polymers or process of their application might decrease transient leakage currents substantially. For space applications, the risk of failures related to anomalous transients can be mitigated by special testing procedures to select parts with an acceptable level of transients and by voltage derating

Guidelines for Selection, Screening and Qualification of Low-Voltage Commercial Multilayer Ceramic Capacitors for Space Programs

This document has been developed in the course of NASA Electronic Parts and Packaging (NEPP) program and is not an official endorsement of the insertion of commercial capacitors in space programs or an established set of requirements for their testing. The purpose of this document is to suggest possible ways for selection, screening, and qualification of commercial capacitors for NASA projects and open discussions in the parts engineering community related to the use of COTS ceramic capacitors. This guideline is applicable to commercial surface mount chip, simple parallel plate design, multi-layer ceramic capacitors (MLCCs) rated to voltages of 100V and less. Parts with different design, e.g. low inductance ceramic capacitors (LICA), land grid array (LGA) etc., might need additional testing and tailoring of the requirements described in this document. Although the focus of this document is on commercial MLCCs, many procedures discussed below would be beneficial for military-grade capacitor

Effect of thermal shock conditions on reliability of chip ceramic capacitors

Abstrac

Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

Soldering of molded case tantalum capacitors can result in damage to Ta205 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture content on the probability of post-soldering electrical failures. In this work, that is based on a case history, different groups of similar types of CWR tantalum capacitors from two lots were prepared for soldering by bake, moisture saturation, and longterm storage at room conditions. Results of the testing showed that both factors: initial quality of the lot, and preconditioning affect the probability of failures. Baking before soldering was shown to be effective to prevent failures even in lots susceptible to pop-corning damage. Mechanism of failures is discussed and recommendations for pre-soldering bake are suggested based on analysis of moisture characteristics of materials used in the capacitors' design

2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors