Application of advanced technologies to derivatives of current small transport aircraft

Mission requirements of the derivative design were the same as the baseline to readily identify the advanced technology benefits achieved. Advanced technologies investigated were in the areas of propulsion, structures and aerodynamics and a direct operating cost benefit analysis conducted to identify the most promising. Engine improvements appear most promising and combined with propeller, airfoil, surface coating and composite advanced technologies give a 21-25 percent DOC savings. A 17 percent higher acquisition cost is offset by a 34 percent savings in fuel used

Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures

The effect of post-growth furnace thermal annealing (FTA) on the Hall mobility and sheet carrier density measured at 9–300 K in the Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures was studied. FTA treatments in the temperature range of 600–900 °C for 30 min were performed on similar heterostructures but with two Si0.2Ge0.8 channel thicknesses. The annealing at 600 °C is seen to have a negligible effect on the Hall mobility as well as on the sheet carrier density. Increases in the annealing temperature resulted in pronounced successive increases of the mobility. For both samples the maximum Hall mobility was observed after FTA at 750 °C. Further increases of the annealing temperature resulted in a decrease in mobility. The sheet carrier density showed the opposite behavior with an increase in annealing temperature. The mechanism causing this behavior is discussed. Structural characterization of as-grown and annealed samples was done by cross-sectional transmission electron microscopy

Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures

The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces

THE U.S. DAIRY INDUSTRY

Agribusiness,

High-frequency performance of Schottky source/drain silicon pMOS devices

A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged

Are Auditors\u27 Going-Concern Evaluations More Useful after SOX?

Bankruptcy risk is a crucial factor in auditors’ decisions whether or not to modify their audit opinion based on the going-concern assumption. SOX required more extensive audit procedures than those required before its passage. More extensive audit procedures should result in more meaningful audit reports. This study examines whether the auditors’ going-concern opinion provides more useful incremental information after SOX than before SOX in distinguishing between distressed companies that become bankrupt in the next year and those that do not. We find that an audit opinion variable adds more useful information to bankruptcy prediction models after SOX than before SOX. Our findings provide evidence that financial statement users have derived benefits from the costly procedures required under SOX