Nanowire Acting as a Superconducting Quantum Interference Device

We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the operation of a superconducting quantum interference device.Comment: 4 pages, 4 figures, 1 tabl

Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films

Microscopy of Mixed Surfaces on Layered Semiconductors

A large number of well-defined hexagonal etch pits is produced on the WSe2 surface by controlled anisotropic corrosion. As a result a mixed surface (combining both ⊥c and ||c components) is created. This surface exhibits photovoltaic properties even better than the atomically smooth van der Waals surface. Measurements of electron beam induced current performed at low temperatures give direct evidence for enhanced current collection of ||c facets. Observations made by transmission electron microscopy and scanning tunneling microscopy show the presence of very low ||c steps on the van der Waals surface

Dynamics of Bulk vs. Nanoscale WS_2: Local Strain and Charging Effects

We measured the infrared vibrational properties of bulk and nanoparticle WS$_2$ in order to investigate the structure-property relations in these novel materials. In addition to the symmetry-breaking effects of local strain, nanoparticle curvature modifies the local charging environment of the bulk material. Performing a charge analysis on the \emph{xy}-polarized E$_{1u}$ vibrational mode, we find an approximate 1.5:1 intralayer charge difference between the layered 2H material and inorganic fullerene-like (IF) nanoparticles. This effective charge difference may impact the solid-state lubrication properties of nanoscale metal dichalcogenides.Comment: 6 pages, 5 figure

Nanotube Piezoelectricity

We combine ab initio, tight-binding methods and analytical theory to study piezoelectric effect of boron nitride nanotubes. We find that piezoelectricity of a heteropolar nanotube depends on its chirality and diameter and can be understood starting from the piezoelectric response of an isolated planar sheet, along with a structure specific mapping from the sheet onto the tube surface. We demonstrate that coupling between the uniaxial and shear deformation are only allowed in the nanotubes with lower chiral symmetry. Our study shows that piezoelectricity of nanotubes is fundamentally different from its counterpart in three dimensional (3D) bulk materials.Comment: 4 pages, with 3 postscript figures embedded. Uses REVTEX4 macros. Also available at http://www.physics.upenn.edu/~nsai/preprints/bn_piezo/index.htm

High Pressure Vibrational Properties of WS2 Nanotubes

We bring together synchrotron-based infrared and Raman spectroscopies, diamond anvil cell techniques, and an analysis of frequency shifts and lattice dynamics to unveil the vibrational properties of multiwall WS2 nanotubes under compression. While most of the vibrational modes display similar hardening trends, the Raman-active A1g breathing mode is almost twice as responsive, suggesting that the nanotube breakdown pathway under strain proceeds through this displacement. At the same time, the previously unexplored high pressure infrared response provides unexpected insight into the electronic properties of the multiwall WS2 tubes. The development of the localized absorption is fit to a percolation model, indicating that the nanotubes display a modest macroscopic conductivity due to hopping from tube to tube

Ferroelectric Phase Transitions in Three-Component Short-Period Superlattices Studied by Ultraviolet Raman Spectroscopy

Vibrational spectra of three-component BaTiO3SrTiO3CaTiO3 short-period superlattices grown by pulsed laser deposition with atomic-layer control have been investigated by ultraviolet Raman spectroscopy. Monitoring the intensity of the first-order phonon peaks in Raman spectra as a function of temperature allowed determination of the ferroelectric phase transition temperature, Tc. Raman spectra indicate that all superlattices remain in the tetragonal ferroelectric phase with out-of-plane polarization in the entire temperature range below Tc. The dependence of Tc on the relative thicknesses of ferroelectric (BaTiO3) to non-ferroelectric materials (SrTiO3 and CaTiO3) has been studied. The highest Tc was found in superlattices having the largest relative amount of BaTiO3, provided that the superlattice maintains its coherency with the substrate. Strain relaxation leads to a significant decrease in the ferroelectric phase transition temperature

Surface analyses of the CdSe0.65Te0.35/aqueous polysulfide interface in relation to its photoelectrochemical properties

The photocorrosion of n‐Cd(Se,Te) electrodes, in potassium and cesium polysulfide solutions, is investigated by x‐ray photoelectron spectroscopy and Auger electron spectrometry. It is shown that Se and Te are exchanged with sulfur from the solution during photocorrosion, possibly via two separate mechanisms: (a) preferential bleaching of tellurium from the crystal matrix, and (b) uniform photocorrosion of the crystal as a whole. Photocurrent spectrum measurements which are presented suggest that a graded band gap is formed when tellurium is preferentially bleached out of the original Cd(Se,Te) crystal. It is shown that cesium is present on the electrode surface which may explain the negative shift of the flat band potential, i.e., increased open circuit voltage of the photoelectrochemical cell. This suggests that the cesium treatment could be used to increase the open circuit voltage of photovoltaic cells