Unifying ultrafast demagnetization and intrinsic Gilbert damping in Co/Ni bilayers with electronic relaxation near the Fermi surface

The ability to controllably manipulate the laser-induced ultrafast magnetic dynamics is a prerequisite for future high speed spintronic devices. The optimization of devices requires the controllability of the ultrafast demagnetization time, , and intrinsic Gilbert damping, . In previous attempts to establish the relationship between and , the rare-earth doping of a permalloy film with two different demagnetization mechanism is not a suitable candidate. Here, we choose Co/Ni bilayers to investigate the relations between and by means of time-resolved magneto-optical Kerr effect (TRMOKE) via adjusting the thickness of the Ni layers, and obtain an approximately proportional relation between these two parameters. The remarkable agreement between TRMOKE experiment and the prediction of breathing Fermi-surface model confirms that a large Elliott-Yafet spin-mixing parameter is relevant to the strong spin-orbital coupling at the Co/Ni interface. More importantly, a proportional relation between and in such metallic films or heterostructures with electronic relaxation near Fermi surface suggests the local spin-flip scattering domains the mechanism of ultrafast demagnetization, otherwise the spin-current mechanism domains. It is an effective method to distinguish the dominant contributions to ultrafast magnetic quenching in metallic heterostructures by investigating both the ultrafast demagnetization time and Gilbert damping simultaneously. Our work can open a novel avenue to manipulate the magnitude and efficiency of Terahertz emission in metallic heterostructures such as the perpendicular magnetic anisotropic Ta/Pt/Co/Ni/Pt/Ta multilayers, and then it has an immediate implication of the design of high frequency spintronic devices

REGULATION OF ADHERENS JUNCTION AND MECHANICAL FORCE DURING APOPTOSIS IN EPITHELIAL TISSUE MORPHOGENESIS

Ph.DDOCTOR OF PHILOSOPH

Learning large margin multiple granularity features with an improved siamese network for person re-identification

Person re-identification (Re-ID) is a non-overlapping multi-camera retrieval task to match different images of the same person, and it has become a hot research topic in many fields, such as surveillance security, criminal investigation, and video analysis. As one kind of important architecture for person re-identification, Siamese networks usually adopt standard softmax loss function, and they can only obtain the global features of person images, ignoring the local features and the large margin for classification. In this paper, we design a novel symmetric Siamese network model named Siamese Multiple Granularity Network (SMGN), which can jointly learn the large margin multiple granularity features and similarity metrics for person re-identification. Firstly, two branches for global and local feature extraction are designed in the backbone of the proposed SMGN model, and the extracted features are concatenated together as multiple granularity features of person images. Then, to enhance their discriminating ability, the multiple channel weighted fusion (MCWF) loss function is constructed for the SMGN model, which includes the verification loss and identification loss of the training image pair. Extensive comparative experiments on four benchmark datasets (CUHK01, CUHK03, Market-1501 and DukeMTMC-reID) show the effectiveness of our proposed method and its performance outperforms many state-of-the-art methods

First-principles study on the effective masses of zinc-blend-derived Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se)

The electron and hole effective masses of kesterite (KS) and stannite (ST) structured Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se) semiconductors are systematically studied using first-principles calculations. We find that the electron effective masses are almost isotropic, while strong anisotropy is observed for the hole effective mass. The electron effective masses are typically much smaller than the hole effective masses for all studied compounds. The ordering of the topmost three valence bands and the corresponding hole effective masses of the KS and ST structures are different due to the different sign of the crystal-field splitting. The electron and hole effective masses of Se-based compounds are significantly smaller compared to the corresponding S-based compounds. They also decrease as the atomic number of the group IV elements (Si, Ge, Sn) increases, but the decrease is less notable than that caused by the substitution of S by Se.Comment: 14 pages, 6 figures, 2 table