3,297 research outputs found
Extending the DEVS Formalism with Initialization Information
DEVS is a popular formalism to model system behaviour using a discrete-event
abstraction. The main advantages of DEVS are its rigourous and precise
specification, as well as its support for modular, hierarchical construction of
models. DEVS frequently serves as a simulation "assembly language" to which
models in other formalisms are translated, either giving meaning to new
(domain-specific) languages, or reproducing semantics of existing languages.
Despite this rigourous definition of its syntax and semantics, initialization
of DEVS models is left unspecified in both the Classic and Parallel DEVS
formalism definition. In this paper, we extend the DEVS formalism by including
an initial total state. Extensions to syntax as well as denotational (closure
under coupling) and operational semantics (abstract simulator) are presented.
The extension is applicable to both main variants of the DEVS formalism. Our
extension is such that it adds to, but does not alter the original
specification. All changes are illustrated by means of a traffic light example
Monitoring Galvanic Replacement Through Three-Dimensional Morphological and Chemical Mapping
Galvanic replacement reactions on metal nanoparticles are often used for the
preparation of hollow nanostructures with tunable porosity and chemical
composition, leading to tailored optical and catalytic properties. However, the
precise interplay between the three-dimensional (3D) morphology and chemical
composition of nanostructures during Galvanic replacement is not always well
understood as the 3D chemical imaging of nanoscale materials is still
challenging. It is especially far from straightforward to obtain detailed
information from the inside of hollow nanostructures using electron microscopy
techniques such as SEM or TEM. We demonstrate here that a combination of
state-of-the-art EDX mapping with electron tomography results in the
unambiguous determination of both morphology transformation and elemental
composition of nanostructures in 3D, during Galvanic replacement of Ag
nanocubes. This work provides direct and unambiguous experimental evidence
leading to new insights in the understanding of the galvanic replacement
reaction. In addition, the powerful approach presented here can be applied to a
wide range of nanoscale transformation processes, which will undoubtedly guide
the development of novel nanostructures
Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films
Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer
Atomic resolution mapping of phonon excitations in STEM-EELS experiments
Atomically resolved electron energy-loss spectroscopy experiments are
commonplace in modern aberrationcorrected transmission electron microscopes.
Energy resolution has also been increasing steadily with the continuous
improvement of electron monochromators. Electronic excitations however are
known to be delocalised due to the long range interaction of the charged
accelerated electrons with the electrons in a sample. This has made several
scientists question the value of combined high spatial and energy resolution
for mapping interband transitions and possibly phonon excitation in crystals.
In this paper we demonstrate experimentally that atomic resolution information
is indeed available at very low energy losses around 100 meV expressed as a
modulation of the broadening of the zero loss peak. Careful data analysis
allows us to get a glimpse of what are likely phonon excitations with both an
energy loss and gain part. These experiments confirm recent theoretical
predictions on the strong localisation of phonon excitations as opposed to
electronic excitations and show that a combination of atomic resolution and
recent developments in increased energy resolution will offer great benefit for
mapping phonon modes in real space
Barrier efficiency of sponge-like La2Zr2O7 buffer layers for YBCO-coated conductors
Solution derived La2Zr2O7 films have drawn much attention for potential
applications as thermal barriers or low-cost buffer layers for coated conductor
technology. Annealing and coating parameters strongly affect the microstructure
of La2Zr2O7, but different film processing methods can yield similar
microstructural features such as nanovoids and nanometer-sized La2Zr2O7 grains.
Nanoporosity is a typical feature found in such films and the implications for
the functionality of the films is investigated by a combination of scanning
transmission electron microscopy, electron energy-loss spectroscopy and
quantitative electron tomography. Chemical solution based La2Zr2O7 films
deposited on flexible Ni-5at.%W substrates with a {100} biaxial texture
were prepared for an in-depth characterization. A sponge-like structure
composed of nanometer sized voids is revealed by high-angle annular dark-field
scanning transmission electron microscopy in combination with electron
tomography. A three-dimensional quantification of nanovoids in the La2Zr2O7
film is obtained on a local scale. Mostly non-interconnected highly facetted
nanovoids compromise more than one-fifth of the investigated sample volume. The
diffusion barrier efficiency of a 170 nm thick La2Zr2O7 film is investigated by
STEM-EELS yielding a 1.8 \pm 0.2 nm oxide layer beyond which no significant
nickel diffusion can be detected and intermixing is observed. This is of
particular significance for the functionality of YBa2Cu3O7-{\delta} coated
conductor architectures based on solution derived La2Zr2O7 films as diffusion
barriers.Comment: Accepted for publication in Superconductor Science and Technolog
Strain accommodation through facet matching in LaSrCuO/NdCeCuO ramp-edge junctions
Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular
dark-field scanning transmission electron microscopy (HAADF-STEM) are used to
investigate the crystal structure of ramp-edge junctions between
superconducting electron-doped NdCeCuO
and superconducting hole-doped LaSrCuO
thin films, the latter being the top layer. On the ramp, a new growth mode of
LaSrCuO with a 3.3 degree tilt of the
c-axis is found. We explain the tilt by developing a strain accommodation model
that relies on facet matching, dictated by the ramp angle, indicating that a
coherent domain boundary is formed at the interface. The possible implications
of this growth mode for the creation of artificial domains in morphotropic
materials are discussed.Comment: 5 pages, 4 figures & 3 pages supplemental information with 2 figures.
Copyright (2015) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics. The following article
appeared in APL Mat. 3, 086101 (2015) and may be found at
http://dx.doi.org/10.1063/1.492779
Interplay of atomic displacements in the quantum magnet (CuCl)LaNb2O7
We report on the crystal structure of the quantum magnet (CuCl)LaNb2O7 that
was controversially described with respect to its structural organization and
magnetic behavior. Using high-resolution synchrotron powder x-ray diffraction,
electron diffraction, transmission electron microscopy, and band structure
calculations, we solve the room-temperature structure of this compound
[alpha-(CuCl)LaNb2O7] and find two high-temperature polymorphs. The
gamma-(CuCl)LaNb2O7 phase, stable above 640K, is tetragonal with a(sub) = 3.889
A, c(sub) = 11.738 A, and the space group P4/mmm. In the gamma-(CuCl)LaNb2O7
structure, the Cu and Cl atoms are randomly displaced from the special
positions along the {100} directions. The beta-phase [a(sub) x 2a(sub) x
c(sub), space group Pbmm] and the alpha-phase [2a(sub) x 2a(sub) x c(sub),
space group Pbam] are stable between 640 K and 500 K and below 500 K,
respectively. The structural changes at 500 K and 640 K are identified as
order-disorder phase transitions. The displacement of the Cl atoms is frozen
upon the gamma --> beta transformation, while a cooperative tilting of the NbO6
octahedra in the alpha-phase further eliminates the disorder of the Cu atoms.
The low-temperature alpha-(CuCl)LaNb2O7 structure thus combines the two types
of the atomic displacements that interfere due to the bonding between the Cu
atoms and the apical oxygens of the NbO6 octahedra. The precise structural
information resolves the controversy between the previous computation-based
models and provides the long-sought input for understanding the magnetic
properties of (CuCl)LaNb2O7.Comment: 12 pages, 10 figures, 5 tables; crystallographic information (cif
files) include
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