Impact ionization dynamics in silicon by MV/cm THz fields

We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terahertz pulses to show that IMI is significantly more efficient at lower than at higher initial carrier densities. Specifically, in the case of silicon with an intrinsic carrier concentration (~1010 cm−3), the carrier multiplication process can generate more than 108 electrons from just a single free electron. The photoexcited carrier density dependence of the IMI rate shows that with decreasing initial carrier density the rate increases and approaches the fundamental Okuto limit imposed by energy conservation

Amplification of resonant field enhancement by plasmonic lattice coupling in metallic slit arrays

Nonlinear spectroscopic investigation in the terahertz (THz) range requires significant field strength of the light fields. It is still a challenge to obtain the required field strengths in free space from table-top laser systems at sufficiently high repetition rates to enable quantitative nonlinear spectroscopy. It is well known that local enhancement of the THz field can be obtained for instance in narrow apertures in metallic films. Here we show by simulation, analytical modelling and experiment that the achievable field enhancement in a two-dimensional array of slits with micrometer dimensions in a metallic film can be increased by at least 60% compared to the enhancement in an isolated slit. The additional enhancement is obtained by optimized plasmonic coupling between the lattice modes and the resonance of the individual slits. Our results indicate a viable route to sensitive schemes for THz spectroscopy with slit arrays manufactured by standard UV photolithography, with local field strengths in the multi-ten-MV/cm range at kHz repetition rates, and tens of kV/cm at oscillator repetition rates