Universality of electron correlations in conducting carbon nanotubes

Effective low-energy Hamiltonian of interacting electrons in conducting single-wall carbon nanotubes with arbitrary chirality is derived from the microscopic lattice model. The parameters of the Hamiltonian show very weak dependence on the chiral angle, which makes the low energy properties of conducting chiral nanotubes universal. The strongest Mott-like electron instability at half filling is investigated within the self-consistent harmonic approximation. The energy gaps occur in all modes of elementary excitations and estimate at $0.01-0.1$ eV.Comment: 4 pages, 2 figure

Effects of magnetic field and disorder on electronic properties of Carbon Nanotubes

Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to induce a metal-insulator transition (MIT) in absence of disorder, and surprisingly disorder does not affect significantly the MIT. These results may find confirmation through tunneling experimentsComment: 4 pages, 6 figures. Phys. Rev. B (in press

Spin configurations of carbon nanotube in a nonuniform external potential

We study, theoretically, the ground state spin of a carbon nanotube in the presence of an external potential. We find that when the external potential is applied to a part of the nanotube, its variation changes the single electron spectrum significantly. This, in combination with Coulomb repulsion and the symmetry properties of a finite length armchair nanotube induces spin flips in the ground state when the external potential is varied. We discuss the possible application of our theory to recent measurements of Coulomb blocked peaks and their dependence on a weak magnetic field in armchair carbon nanotubes.Comment: RevTeX, 5 pages + two figure

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

Electronic Properties of Armchair Carbon Nanotubes : Bosonization Approach

The phase Hamiltonian of armchair carbon nanotubes at half-filling and away from it is derived from the microscopic lattice model by taking the long range Coulomb interaction into account. We investigate the low energy properties of the system using the renormalization group method. At half-filling, the ground state is a Mott insulator with spin gap, in which the bound states of electrons at different atomic sublattices are formed. The difference from the recent results [Phys. Rev. Lett. 79, 5082 (1997)] away half-filling is clarified.Comment: 4 pages, 1 figure, Revte

Luttinger liquid behavior in multi-wall carbon nanotubes

The low-energy theory for multi-wall carbon nanotubes including the long-ranged Coulomb interactions, internal screening effects, and single-electron hopping between graphite shells is derived and analyzed by bosonization methods. Characteristic Luttinger liquid power laws are found for the tunneling density of states, with exponents approaching their Fermi liquid value only very slowly as the number of conducting shells increases. With minor modifications, the same conclusions apply to transport in ropes of single-wall nanotubes.Comment: 4 pages Revte

Intrinsic Coulomb blockade in multi-wall carbon nanotubes

Carbon nanotubes provide a new class of molecular wires that display new and exciting mesoscopic transport properties. We provide a detailed theoretical description for transport in multi-wall nanotubes, where both disorder and strong interactions are important. The interplay of both aspects leads to a particularly effective intrinsic Coulomb blockade for tunneling. The relation to recent experiments is discussed.Comment: 13 pages, incl 2 figs, for: Special issue "Transport in Molecular Wires" in Chemical Physics, ed. by P. Hanggi, M. Ratner, S. Yalirak

Backward diode composed of a metallic and semiconducting nanotube

The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigated. A tight binding model is used for the analysis, which includes the Hartree-Fock approximation and the Green's function method. It is found that the junction has a behavior similar to the backward diode if the gate electrode is located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the required length for the rectification could be reduced.Comment: 4 pages, RevTeX, uses epsf.st

The Effect of Structural Distortions on the Electronic Structure of Carbon Nanotubes

We calculated the effects of structural distortions on the electronic structure of carbon nanotubes. The key modification of the electronic structure brought about by bending a nanotube involves an increased mixing of $\sigma$ and $\pi$-states. This mixing leads to an enhanced density-of-states in the valence band near the Fermi energy region. While in a straight tube the states accessible for electrical conduction are essentially pure C($2p_{\pi}$)-states, they acquire significant C($2sp_{\sigma}$) character upon bending. Bending also leads to a charge polarization of the C-C bonds in the deformed region reminiscent of interface dipole formation. Scattering of conduction electrons at the distorted regions may lead to electron localization at low temperatures.Comment: 11 pages and 4 figures, (figure 4 corrected

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.Comment: 6 pages text, 3 figures and 1 table of content graphic; available as NanoLetters ASAP article on the we