Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.Comment: 3 pages, 2 figures, use revtex.sty. 'The Eleventh International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)',July 19-23, 199

The Effect of Local Structure and Non-uniformity on Decoherence-Free States of Charge Qubits

We analyze robustness of decoherence-free (DF) subspace in charge qubits when there are a local structure and non-uniformity that violate collective decoherence measurement condition. We solve master equations of up to four charge qubits and a detector as two serially coupled quantum point contacts (QPC) with an island structure. We show that robustness of DF states is strongly affected by local structure as well as by non-uniformities of qubits

Steady-state solution for dark states using a three-level system in coupled quantum dots

Quantum dots (QDs) are one of the promising candidates of interconnection between electromagnetic field and electrons in solid-state devices. Dark states appear as a result of coherence between the electromagnetic fields and the discrete energy levels of the system. Here, we theoretically solve the steady-state solutions of the density matrix equations for a thee-level double QD system and investigate the condition of the appearance of a dark state. We also numerically show the appearance of the dark state by time-dependent current characteristics.Comment: 5 pages, 5 figure

Superconductive Phonon Anomalies in High-TcT_c Cuprates

We consider the effects on phonon dynamics of spin-lattice coupling within the slave-boson mean-field treatment of the extended $t$-$J$ model. With no additional assumptions the theory is found to give a semi-quantitative account of the frequency and linewidth anomalies observed by Raman and neutron scattering for the 340$cm^{-1}$ $B_{1g}$ phonon mode in $YBa_2Cu_3O_7$ at the superconducting transition. We discuss the applicability of the model to phonon modes of different symmetries, and report a connection to spin-gap features observed in underdoped YBCO. The results suggest the possibility of a unified understanding of the anomalies in transport, magnetic and lattice properties.Comment: heavily revised version of previous paper, including systematic treatment of effect of $t$ term, coupling constant derivation and calculation of phonon linewidth broadening. Revised Figs. 3 and 4 still only available by sending fax # to [email protected]

The Effect of Side Traps on Ballistic Transistor in Kondo Regime

The effect of side-traps on conductance is calculated in the range of slave-boson mean field theory, especially when there are electrodes on both sides of the conductor. This corresponds to an investigation of transport properties in future ballistic transistors. An intrinsic dip as a result of the interference effect (Fano-Kondo effect) is expected to be observed as one of interesting interplays between physics and engineering devices.Comment: 3 pages, 5 figures. 2006 International Conference on Solid State Devices and Materials (SSDM2006), Sept. 12-15, 2006, Yokohama, Japa