491 research outputs found

    The Fate of a Five-Dimensional Rotating Black Hole via Hawking Radiation

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    We study the evolution of a five-dimensional rotating black hole emitting scalar field radiation via the Hawking process for arbitrary initial values of the two rotation parameters aa and bb. It is found that any such black hole whose initial rotation parameters are both nonzero evolves toward an asymptotic state a/M1/2=b/M1/2=const(0)a/M^{1/2}=b/M^{1/2}={\rm const}(\neq 0), where this constant is independent of the initial values of aa and bb.Comment: 6 pages, 6 figure

    Preliminary Study to the Effect of Res Judicata

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    Many Japanese textbooks on Civil Procedure explain the res judicata as the effect of final judgments on claim (the existence or nonexistence of rights or legal relationships) when the same rights or legal relationships are asserted as the claim of the following litigation or its premise or when the claim of the following litigation is inconsistent with the prior final judgment. My research note proposes that res judicata should be understood simply as the effect to prohibit parties from asserting what is inconsistent with the decision on claim (as to the existence or nonexistence of right or legal relationship) in the prior final judgment whenever the same right or legal relationship would be the point of issue in dispute in the following litigation between persons who were parties or who are in privity with persons who were parties in prior litigation

    Career and achievements of Professor Yoshiaki Kohari

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    平野敏彦先生 その人と学問

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    Correlation between morphology and transport properties of quasi-free-standing monolayer graphene

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    We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800{\deg}C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000{\deg}C, and they decrease the carrier mobility significantly
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