The effect of manganese oxide on the sinterability of hydroxyapatite

The sinterability of manganese oxide (MnO2) doped hydroxyapatite (HA) ranging from 0.05 to 1 wt% was investigated. Green samples were prepared and sintered in air at temperatures ranging from 1000 to 1400 °C. Sintered bodies were characterized to determine the phase stability, grain size, bulk density, hardness, fracture toughness and Young's modulus. XRD analysis revealed that the HA phase stability was not disrupted throughout the sintering regime employed. In general, samples containing less than 0.5 wt% MnO2 and when sintered at lower temperatures exhibited higher mechanical properties than the undoped HA. The study revealed that all the MnO2-doped HA achieved >99% relative density when sintered at 1100–1250 °C as compared to the undoped HA which could only attained highest value of 98.9% at 1150 °C. The addition of 0.05 wt% MnO2 was found to be most beneficial as the samples exhibited the highest hardness of 7.58 GPa and fracture toughness of 1.65 MPam1/2 as compared to 5.72 GPa and 1.22 MPam1/2 for the undoped HA when sintered at 1000 °C. Additionally, it was found that the MnO2-doped samples attained E values above 110 GPa when sintered at temperature as low as 1000 °C if compared to 1050 °C for the undoped HA

Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

We determine the spin susceptibility $\chi$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, $\chi$ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to $4\times10^{11} cm^{-2}$. In the high density limit, $\chi$ tends correctly towards $\chi\to 1$ and compare well with recent theory.Comment: Submitted to Physical Review

Improved drive current in RF vertical MOSFETS using hydrogen anneal

This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three

Predictive Modelling Using Unstructured Data From Online Forums: A Case Study on E-cigarette Users

In the age of the digital economy, social media, forums and other online platforms have played active parts in our daily activities. The amount of data digitized and recorded in these platforms have surged exponentially. Many believed that this underexplored unstructured data sources have huge potential in offering insights to policy makers and companies. This paper aims to propose a hybrid approach using inductive and deductive reasoning to identify motivational factors to use e-cigarettes for predictive modelling. A total of 790 comments and discussions relevant to e-cigarette use and motivations to use e-cigarette were scraped and stored from online forums like Reddit, Vapingunderground and e-cigarette-forum. A series of text analytics were conducted on the text corpus and the cluster analysis enabled us to build a predictive model. Using Bayesian Structural Equation Modelling, we concluded that the constructs derived by clustering, i.e. Cost and Convenience and Enjoyment, have significant associations with smokers trying to quit smoking. While health-related issues were inherent to the notion of quitting smoking, enjoyment, cost and convenience were motivational factors which will generate favourable response towards quitting smoking. The findings showed encouraging results from a methodological standpoint and offered insights to policy makers and companies on health-related issues pertaining to the use of e-cigarettes

Measurement of Scattering Rate and Minimum Conductivity in Graphene

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low carrier density limit, the conductivity exhibits values in the range of $2-12e^2/h$, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short range disorder whereas low mobility samples are dominated by long range scatterers.Comment: 4 pages 4 figure

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar

Unconditional teleportation of continuous-variable entanglement

We give a protocol and criteria for demonstrating unconditional teleportation of continuous-variable entanglement (i.e., entanglement swapping). The initial entangled states are produced with squeezed light and linear optics. We show that any nonzero entanglement (any nonzero squeezing) in both of two entanglement sources is sufficient for entanglement swapping to occur. In fact, realization of continuous-variable entanglement swapping is possible using only {\it two} single-mode squeezed states.Comment: 4 pages, 2 figures, published version, title change

Dynamics of iron atoms across the pressure-induced Invar transition in Pd_3Fe

The ^(57)Fe phonon partial density of states (PDOS) in L1_2-ordered Pd_3Fe was studied at high pressures by nuclear resonant inelastic x-ray scattering (NRIXS) measurements and density functional theory (DFT) calculations. The NRIXS spectra showed that the stiffening of the ^(57)Fe PDOS with decreasing volume was slower from 12 to 24 GPa owing to the pressure-induced Invar transition in Pd_3Fe, with a change from a high-moment ferromagnetic (FM) state to a low-moment (LM) state observed by nuclear forward scattering. Force constants obtained from fitting to a Born–von Kármán model showed a relative softening of the first-nearest-neighbor (1NN) Fe-Pd longitudinal force constants at the magnetic transition. For the FM low-pressure state, the DFT calculations gave a PDOS and 1NN longitudinal force constants in good agreement with experiment, but discrepancies for the high-pressure LM state suggest the presence of short-range magnetic order