39,026 research outputs found
High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
A large magnetoresistance effect is obtained at room-temperature by using
p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is
the virtual elimination of thermal currents due to the presence of band gaps in
the contacts. The current at B=0T is greatly decreased while the current at
B>0T is relatively large due to the band-to-band tunneling effects, resulting
in a high magnetoresistance ratio, even at room-temperature. Moreover, we
explore the effects of edge-roughness, length, and width of GNR channels on
device performance. An increase in edge-roughness and channel length enhances
the magnetoresistance ratio while increased channel width can reduce the
operating bias.Comment: http://dx.doi.org/10.1063/1.362445
Pseudo spin-orbit coupling of Dirac particles in graphene spintronics
We study the pseudo spin-orbital (SO) effects experienced by massive Dirac
particles in graphene, which can potentially be of a larger magnitude compared
to the conventional Rashba SO effects experienced by particles in a 2DEG
semiconductor heterostructure. In order to generate a uniform vertical pseudo
SO field, we propose an artificial atomic structure, consisting of a graphene
ring and a charged nanodot at the center which produces a large radial electric
field. In this structure, a large pseudo SO coupling strength can be achieved
by accelerating the Dirac particles around the ring, due to the small energy
gap in graphene and the large radial electric field emanating from the charged
nanodot. We discuss the theoretical possibility of harnessing the pseudo SO
effects in mesoscopic applications, e.g. pseudo spin relaxation and switching.Comment: 12 pages, 1 figur
Evidence of Spatially Inhomogeous Pairing on the Insulating Side of a Disorder-Tuned Superconductor-Insulator Transition
Measurements of transport properties of amorphous insulating indium oxide
thin films have been interpreted as evidence of the presence of superconducting
islands on the insulating side of a disorder-tuned superconductor-insulator
transition. Although the films are not granular, the behavior is similar to
that observed in granular films. The results support theoretical models in
which the destruction of superconductivity by disorder produces spatially
inhomogenous pairing with a spectral gap.Comment: Revised title and content/argument. Totals: 4 pages, 3 figure
Quantum Fully Homomorphic Encryption With Verification
Fully-homomorphic encryption (FHE) enables computation on encrypted data
while maintaining secrecy. Recent research has shown that such schemes exist
even for quantum computation. Given the numerous applications of classical FHE
(zero-knowledge proofs, secure two-party computation, obfuscation, etc.) it is
reasonable to hope that quantum FHE (or QFHE) will lead to many new results in
the quantum setting. However, a crucial ingredient in almost all applications
of FHE is circuit verification. Classically, verification is performed by
checking a transcript of the homomorphic computation. Quantumly, this strategy
is impossible due to no-cloning. This leads to an important open question: can
quantum computations be delegated and verified in a non-interactive manner? In
this work, we answer this question in the affirmative, by constructing a scheme
for QFHE with verification (vQFHE). Our scheme provides authenticated
encryption, and enables arbitrary polynomial-time quantum computations without
the need of interaction between client and server. Verification is almost
entirely classical; for computations that start and end with classical states,
it is completely classical. As a first application, we show how to construct
quantum one-time programs from classical one-time programs and vQFHE.Comment: 30 page
Efficient and realistic device modeling from atomic detail to the nanoscale
As semiconductor devices scale to new dimensions, the materials and designs
become more dependent on atomic details. NEMO5 is a nanoelectronics modeling
package designed for comprehending the critical multi-scale, multi-physics
phenomena through efficient computational approaches and quantitatively
modeling new generations of nanoelectronic devices as well as predicting novel
device architectures and phenomena. This article seeks to provide updates on
the current status of the tool and new functionality, including advances in
quantum transport simulations and with materials such as metals, topological
insulators, and piezoelectrics.Comment: 10 pages, 12 figure
Kinetic description of hadron-hadron collisions
A transport model based on the mean free path approach to describe pp
collisions is proposed. We assume that hadrons can be treated as bags of
partons similarly to the MIT bag model. When the energy density in the
collision is higher than a critical value, the bags break and partons are
liberated. The partons expand and can make coalescence to form new hadrons. The
results obtained compare very well with available data and some prediction for
higher energies collisions are discussed. Based on the model we suggest that a
QGP could already be formed in the pp collisions at high energies
Exciton energy transfer in nanotube bundles
Photoluminescence is commonly used to identify the electronic structure of
individual nanotubes. But, nanotubes naturally occur in bundles. Thus, we
investigate photoluminescence of nanotube bundles. We show that their complex
spectra are simply explained by exciton energy transfer between adjacent tubes,
whereby excitation of large gap tubes induces emission from smaller gap ones
via Forster interaction between excitons. The consequent relaxation rate is
faster than non-radiative recombination, leading to enhanced photoluminescence
of acceptor tubes. This fingerprints bundles with different compositions and
opens opportunities to optimize them for opto-electronics.Comment: 5 pages, 5 figure
Effects of ac-field amplitude on the dielectric susceptibility of relaxors
The thermally activated flips of the local spontaneous polarization in
relaxors were simulated to investigate the effects of the applied-ac-field
amplitude on the dielectric susceptibility. It was observed that the
susceptibility increases with increasing the amplitude at low temperatures. At
high temperatures, the susceptibility experiences a plateau and then drops. The
maximum in the temperature dependence of susceptibility shifts to lower
temperatures when the amplitude increases. A similarity was found between the
effects of the amplitude and frequency on the susceptibility.Comment: 8 pages, 7 figures, Phys. Rev. B (in July 1st
Evidence for nodeless superconducting gap in NaFeCoAs from low-temperature thermal conductivity measurements
The thermal conductivity of optimally doped NaFeCoAs
( 20 K) and overdoped NaFeCoAs ( 11 K)
single crystals were measured down to 50 mK. No residual linear term
is found in zero magnetic field for both compounds, which is an
evidence for nodeless superconducting gap. Applying field up to = 9 T
() does not noticeably increase in
NaFeCoAs, which is consistent with multiple isotropic gaps
with similar magnitudes. The of overdoped
NaFeCoAs shows a relatively faster field dependence,
indicating the increase of the ratio between the magnitudes of different gaps,
or the enhancement of gap anisotropy upon increasing doping.Comment: 5 pages, 4 figure
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