The Reliability Function of Lossy Source-Channel Coding of Variable-Length Codes with Feedback

We consider transmission of discrete memoryless sources (DMSes) across discrete memoryless channels (DMCs) using variable-length lossy source-channel codes with feedback. The reliability function (optimum error exponent) is shown to be equal to $\max\{0, B(1-R(D)/C)\},$ where $R(D)$ is the rate-distortion function of the source, $B$ is the maximum relative entropy between output distributions of the DMC, and $C$ is the Shannon capacity of the channel. We show that, in this setting and in this asymptotic regime, separate source-channel coding is, in fact, optimal.Comment: Accepted to IEEE Transactions on Information Theory in Apr. 201

Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

Various approaches can be used to selectively control the amount of intermixing in III-Vquantum well and quantum dotstructures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dotstructures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiOxNyfilms. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.This work has been made possible with access to the ACT Node of the Australian National Fabrication Facility and through the financial support of the Australian Research Council

Implementation of UAV Coordination Based on a Hierarchical Multi-UAV Simulation Platform

In this paper, a hierarchical multi-UAV simulation platform,called XTDrone, is designed for UAV swarms, which is completely open-source 4 . There are six layers in XTDrone: communication, simulator,low-level control, high-level control, coordination, and human interac-tion layers. XTDrone has three advantages. Firstly, the simulation speedcan be adjusted to match the computer performance, based on the lock-step mode. Thus, the simulations can be conducted on a work stationor on a personal laptop, for different purposes. Secondly, a simplifiedsimulator is also developed which enables quick algorithm designing sothat the approximated behavior of UAV swarms can be observed inadvance. Thirdly, XTDrone is based on ROS, Gazebo, and PX4, andhence the codes in simulations can be easily transplanted to embeddedsystems. Note that XTDrone can support various types of multi-UAVmissions, and we provide two important demos in this paper: one is aground-station-based multi-UAV cooperative search, and the other is adistributed UAV formation flight, including consensus-based formationcontrol, task assignment, and obstacle avoidance.Comment: 12 pages, 10 figures. And for the, see https://gitee.com/robin_shaun/XTDron

Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot(QD)structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the dopedstructures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes.T. Hakkarainen, O. Douhéret, and S. Anand would like to acknowledge the Swedish Research Council VR for fi- nancial support and the Kurt-Alice Wallenberg KAW foundation for financing the microscope. L. Fu, H. H. Tan, and C. Jagadish would like to acknowledge the Australian Research Council ARC for financial support and Australian National Fabrication Facility ANFF for access to the facilities

International Comparative Study on the Curriculum Connection between Middle and Higher Vocational Education

The modern vocational education system is the premise and logical starting point of the Curriculum Connection between Middle and Higher Vocational Education , which is the foundation of constructing modern vocational education system. The international comparative study method is employed to organize, study and analyze the Curriculum Connection between Middle and Higher Vocational Education in the major developed countries in the world. The thesis is aimed at finding the distinctive development characteristics and common development rules of the Curriculum Connection between Middle and Higher Vocational Education in main developed countries,so as to provide experience reference for the future theoretical research and practical research in China

Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO₂ layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.One of the authors (H.H.T.) acknowledges a fellowship awarded to him by the Australian Research Council