Twisted-light-induced intersubband transitions in quantum wells at normal incidence

We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present a component of the light's electric field in the propagation direction. We derive the matrix elements of the light-matter interaction for a Bessel-type twisted-light beam represented by its vector potential in the paraxial approximation. Then, we consider the dynamics of photo-excited electrons making intersubband transitions between the first and second subbands of a standard semiconductor quantum well. Finally, we analyze the light-matter matrix elements in order to evaluate which transitions are more favorable for given orbital angular momentum of the light beam in the case of small semiconductor structures.Comment: 9 pages, 2 figure

Non-perturbative Correlation Effects in Diluted Magnetic Semiconductors

The effects of carrier-impurity correlations due to a Kondo-like spin-spin interaction in diluted magnetic semiconductors are investigated. These correlations are not only responsible for a transfer of spins between the carriers and the impurities, but also produce non-perturbative effects in the spin dynamics such as renormalization of the precession frequency of the carrier spins, which can reach values of several percent in CdMnTe quantum wells. In two-dimensional systems, the precession frequency renormalization for a single electron spin with defined wave vector shows logarithmic divergences similar to those also known from the Kondo problem in metals. For smooth electron distributions, however, the divergences disappear due to the integrability of the logarithm. A possible dephasing mechanism caused by the wave-vector dependence of the electron spin precession frequencies is found to be of minor importance compared to the spin transfer from the carrier to the impurity system. In the Markov limit of the theory, a quasi-equilibrium expression for the carrier-impurity correlation energy can be deduced indicating the formation of strongly correlated carrier-impurity states for temperatures in the mK range

Insensitivity of spin dynamics to the orbital angular momentum transferred from twisted light to extended semiconductors

We study the spin dynamics of carriers due to the Rashba interaction in semiconductor quantum disks and wells after excitation with light with orbital angular momentum. We find that although twisted light transfers orbital angular momentum to the excited carriers and the Rashba interaction conserves their total angular momentum, the resulting electronic spin dynamics is essentially the same for excitation with light with orbital angular momentum $l=+|l|$ and $l=-|l|$. The differences between cases with different values of $|l|$ are due to the excitation of states with slightly different energies and not to the different angular momenta per se, and vanish for samples with large radii where a $k$-space quasi-continuum limit can be established. These findings apply not only to the Rashba interaction but also to all other envelope-function approximation spin-orbit Hamiltonians like the Dresselhaus coupling.Comment: 5 pages, 2 figure

Photoexcitation of graphene with twisted light

We study theoretically the interaction of twisted light with graphene. The light-matter interaction matrix elements between the tight-binding states of electrons in graphene are determined near the Dirac points. We examine the dynamics of the photoexcitation process by posing the equations of motion of the density matrix and working up to second order in the field. The time evolution of the angular momentum of the photoexcited electrons and their associated photocurrents are examined in order to elucidate the mechanisms of angular momentum transfer. We find that the transfer of spin and orbital angular momentum from light to the electrons is more akin here to the case of intraband than of interband transitions in semiconductors, due to the fact that the two relevant energy bands of graphene originate from the same atomic orbitals.Comment: 18 pages, 4 figure