Spin-orbit interaction in three-dimensionally bounded semiconductor nanostructures

The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field and variation of the chemical composition. The interaction, taking into account all remote bands perturbatively, is presented with two contributions: a heterointerface term and a term caused by the external electric field. They have generally comparable strength and can be written in a unified manner only for 2D systems, where they can partially cancel each other. For quantum wires and dots composed of wurtzite semiconductors new terms appear, absent in zinc-blende structures, which acquire the standard Rashba form in 2D systems.Comment: 18 pages, 1 figur

Interface electronic states and boundary conditions for envelope functions

The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for envelope functions is derived using the Hermiticity and symmetry requirements. Empirical coefficients in the connection rules play role of material parameters which characterize an internal structure of every particular heterointerface. As an illustration we present the derivation of the most general connection rules for the one-band effective mass and 4-band Kane models. The conditions for the existence of Tamm-like localized interface states are established. It is shown that a nontrivial form of the connection rules can also result in the formation of resonant states. The most transparent manifestation of such states is the resonant tunneling through a single-barrier heterostructure.Comment: RevTeX4, 11 pages, 5 eps figures, submitted to Phys.Rev.