50 research outputs found

    Prospect for Future MeV Gamma-ray Active Galactic Nuclei Population Studies

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    While the X-ray, GeV gamma-ray, and TeV gamma-ray skies have been extensively studied, the MeV gamma-ray sky is not well investigated after the Imaging Compton Telescope (COMPTEL) scanned the sky about two decades ago. In this paper, we investigate prospects for active galactic nuclei population studies with future MeV gamma-ray missions using recent spectral models and luminosity functions of Seyfert and flat spectrum radio quasars (FSRQs). Both of them are plausible candidates as the origins of the cosmic MeV gamma-ray background. If the cosmic MeV gamma-ray background radiation is dominated by non-thermal emission from Seyferts, the sensitivity of 10^-12 erg cm^-2 s^-1 is required to detect several hundred Seyferts in the entire sky. If FSRQs make up the cosmic MeV gamma-ray background, the sensitivity of ~4 x 10^-12 erg cm^-2 s^-1 is required to detect several hundred FSRQs following the recent FSRQ X-ray luminosity function. However, based on the latest FSRQ gamma-ray luminosity function, with which FSRQs can explain up to ~30% of the MeV background, we can expect several hundred FSRQs even with the sensitivity of 10^-11 erg cm^-2 s^-1 which is almost the same as the sensitivity goal of the next generation MeV telescopes.Comment: 9 pages, 5 figures, accepted for publication in PAS

    High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices

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    We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was obtained at 59.54 keV. Moreover, the possibility of improved spectral performance by utilizing the energy information of both side strips was demonstrated. We designed and fabricated a new analog ASIC, VA32TA6, for the readout of semiconductor detectors, which is also suitable for DSDs. A new feature of the ASIC is its internal ADC function. We confirmed this function and good noise performance that reaches an equivalent noise charge of 110 e- under the condition of 3-4 pF input capacitance.Comment: 6 pages, 10 figures, accepted for publication in IEEE Transactions on Nuclear Scienc

    Results of a Si/CdTe Compton Telescope

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    We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).Comment: 11 pages, 13 figures, presented at SPIE conference HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VII", San Diego, 2005. To be published in Proc. SPIE 200
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