Prospect for Future MeV Gamma-ray Active Galactic Nuclei Population Studies

While the X-ray, GeV gamma-ray, and TeV gamma-ray skies have been extensively studied, the MeV gamma-ray sky is not well investigated after the Imaging Compton Telescope (COMPTEL) scanned the sky about two decades ago. In this paper, we investigate prospects for active galactic nuclei population studies with future MeV gamma-ray missions using recent spectral models and luminosity functions of Seyfert and flat spectrum radio quasars (FSRQs). Both of them are plausible candidates as the origins of the cosmic MeV gamma-ray background. If the cosmic MeV gamma-ray background radiation is dominated by non-thermal emission from Seyferts, the sensitivity of 10^-12 erg cm^-2 s^-1 is required to detect several hundred Seyferts in the entire sky. If FSRQs make up the cosmic MeV gamma-ray background, the sensitivity of ~4 x 10^-12 erg cm^-2 s^-1 is required to detect several hundred FSRQs following the recent FSRQ X-ray luminosity function. However, based on the latest FSRQ gamma-ray luminosity function, with which FSRQs can explain up to ~30% of the MeV background, we can expect several hundred FSRQs even with the sensitivity of 10^-11 erg cm^-2 s^-1 which is almost the same as the sensitivity goal of the next generation MeV telescopes.Comment: 9 pages, 5 figures, accepted for publication in PAS

2-mm-Thick Large-Area CdTe Double-sided Strip Detectors for High-Resolution Spectroscopic Imaging of X-ray and Gamma-ray with Depth-Of-Interaction Sensing

We developed a 2-mm-thick CdTe double-sided strip detector (CdTe-DSD) with a 250 um strip pitch, which has high spatial resolution with a uniform large imaging area of 10 cm$^2$ and high energy resolution with high detection efficiency in tens to hundreds keV. The detector can be employed in a wide variety of fields for quantitative observations of hard X-ray and soft gamma-ray with spectroscopic imaging, for example, space observation, nuclear medicine, and non-destructive elemental analysis. This detector is thicker than the 0.75-mm-thick one previously developed by a factor of $\sim$2.7, thus providing better detection efficiency for hard X-rays and soft gamma rays. The increased thickness could potentially enhance bias-induced polarization if we do not apply sufficient bias and if we do not operate at a low temperature, but the polarization is not evident in our detector when a high voltage of 500 V is applied to the CdTe diode and the temperature is maintained at -20 $^\circ$C during one-day experiments. The ''Depth Of Interaction'' (DOI) dependence due to the CdTe diode's poor carrier-transport property is also more significant, resulting in much DOI information while complicated detector responses such as charge sharings or low-energy tails that exacerbate the loss in the energy resolution. In this paper, we developed 2-mm-thick CdTe-DSDs, studied their response, and evaluated their energy resolution, spatial resolution, and uniformity. We also constructed a theoretical model to understand the detector response theoretically, resulting in reconstructing the DOI with an accuracy of 100 um while estimating the carrier-transport property. We realized the detector that has high energy resolution and high 3D spatial resolution with a uniform large imaging area.Comment: 13 pages, 11 figures, 1 table, Accepted for publication in NIM

High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices

We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was obtained at 59.54 keV. Moreover, the possibility of improved spectral performance by utilizing the energy information of both side strips was demonstrated. We designed and fabricated a new analog ASIC, VA32TA6, for the readout of semiconductor detectors, which is also suitable for DSDs. A new feature of the ASIC is its internal ADC function. We confirmed this function and good noise performance that reaches an equivalent noise charge of 110 e- under the condition of 3-4 pF input capacitance.Comment: 6 pages, 10 figures, accepted for publication in IEEE Transactions on Nuclear Scienc