Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy

AlGaN-based deep ultraviolet light-emitting diodes (LEDs) have a wide range of applications such as medical diagnostics, gas sensing, and water sterilization. Metal–organic vapor phase epitaxy (MOVPE) method is used for the growth of all-in-one structures, including doped layer and thin multilayers, using metal–organic and gas source raw materials for semiconductor devices. For AlN growth with high crystalline quality, high temperature is necessary to promote the surface migration of Al atoms and Al-free radicals. However, increase in temperature generates parasitic gas-phase prereactions such as adduct formation. In this work, AlN growth at 1500 °C by a stable vapor phase reaction has been achieved by jet stream gas flow metal–organic vapor phase epitaxy. The AlN growth rate increases with gas flow velocity and saturates at ~ 10 m/s at room temperature. Moreover, it is constant at an ammonia flow rate at a V/III ratio from 50 to 220. These results demonstrate the reduction in adduct formation, which is a typical issue with the vapor phase reaction between triethylaluminum and ammonia. The developed method provides the in-plane uniformity of AlN thickness within 5%, a low concentration of unintentionally doped impurities, smooth surface, and decrease in dislocation density because of the suppression of parasitic reactions

DEUTERATION EFFECT ON THE NH/ND STRETCH BAND OF THE JET-COOLED 7-AZAINDOLE AND ITS TAUTOMERIC DIMERS: RELATION TO THE GROUND-STATE DOUBLE PROTON-TRANSFER REACTION

Author Institution: Department of Chemistry, School of Science, Kitasato University, Minami-ku, Sagamihara 252-0373, Japan; Department of Chemistry, Graduate School of Scinec, Kobe University, Nada-ku, Kobe 657-8501, JapanIn order to investigate the deuteration effect on the vibrational dynamics of the NH and/or ND stretch excited levels of the 7-azaindole (7-AI) normal dimer and its tautomeric dimer, we have carried out infrared spectroscopy of three isotopic species for each dimers; undeuterated one (NH-NH) and one or two hydrogen atom(s) of the NH groups is deuterated ones (NH-ND and ND-ND, respectively). It is found that the ND stretch band profiles of the NH-ND and ND-ND tautomeric dimers are very similar with each other. This result is very distinct from the result of the comparison of the NH stretch band profiles of the NH-NH and NH-ND dimers in our previous study \textbf{114}, 3199 (2010).}. For a further discussion, we have examined the deuteration effect in the case of the 7-AI normal dimer. It is found that the NH stretch band profiles of the NH-NH and the NH-ND dimers and also the ND stretch band profiles of the NH-ND and the ND-ND dimers exhibit similar patterns, respectively. These facts indicates that the vibrational relaxation from the NH/ND stretch level of the normal dimer basically proceed within a monomer unit. The large deuteration effect of the NH stretch band profile observed previously is found to be characteristic of the tautomeric dimer. This behavior is related to a large anharmonicity of the potential energy surface originating from an existence of the double-proton transfer reaction barrier

Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy

AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) are expected to have various applications, including sensing and printing, and light with ultraviolet-C (UVC) wavelengths has a virus inactivation effect. The metalorganic vapor phase epitaxy (MOVPE) method has been used to fabricate LED devices with film control and impurity doping. However, to achieve high luminous efficiency, highly crystalline aluminum nitride (AlN) must be grown in the underlying layer. Although high temperatures are required to grow high-quality AlN for strong migration at the surface, there is a trade-off in the high temperature promoting parasitic reactions. These parasitic reactions are more dominant at a high V/III ratio with more raw material in the case of using the conventional MOVPE. Here, we used jet stream gas flow MOVPE to investigate the effect of V/III ratio dependencies in optimizing AlN growth and without affecting parasitic reaction conditions. As a result, trends of typical AlN crystal growth at V/III-ratio dependencies were obtained. AlN is more stable at a higher V/III ratio of 1000, exhibiting a double atomic step surface, and the crystal orientation is further improved at 1700 °C compared to that at a lower V/III ratio

Correction: Therapeutic Effects in a Transient Middle Cerebral Artery Occlusion Rat Model by Nose-To-Brain Delivery of Anti-TNF-Alpha siRNA with Cell-Penetrating Peptide-Modified Polymer Micelles. Pharmaceutics, 2019, 11(9), 478

The appropriate information for the reprint used with permission from [...

Therapeutic Effects in a Transient Middle Cerebral Artery Occlusion Rat Model by Nose-To-Brain Delivery of Anti-TNF-Alpha siRNA with Cell-Penetrating Peptide-Modified Polymer Micelles

We previously reported that siRNA delivery to the brain is improved by the nose-to-brain delivery route and by conjugation with polyethylene glycol-polycaprolactone (PEG-PCL) polymer micelles and the cell-penetrating peptide, Tat (PEG-PCL-Tat). In this study, we evaluated the nose-to-brain delivery of siRNA targeting TNF-α (siTNF-α) conjugated with PEG-PCL-Tat to investigate its therapeutic effects on a transient middle cerebral artery occlusion (t-MCAO) rat model of cerebral ischemia-reperfusion injury. Intranasal treatment was provided 30 min after infarction induced via suturing. Two hours after infarction induction, the suture was removed, and blood flow was released. At 22 h post-reperfusion, we assessed the infarcted area, TNF-α production, and neurological score to determine the therapeutic effects. The infarcted area was observed over a wide range in the untreated group, whereas shrinkage of the infarcted area was observed in rats subjected to intranasal administration of siTNF-α with PEG-PCL-Tat micelles. Moreover, TNF-α production and neurological score in rats treated by intranasal administration of siTNF-α with PEG-PCL-Tat micelles were significantly lower than those in untreated and naked siTNF-α-treated rats. These results indicate that nose-to-brain delivery of siTNF-α conjugated with PEG-PCL-Tat micelles alleviated the symptoms of cerebral ischemia-reperfusion injury

High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy

Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate. However, the low growth temperature in AlN underlying layer is grown by limited growth temperature in conventional MOVPE, and high temperature is preferable for AlN growth. Furthermore, the AlN underlying layer has many dislocations owing to the active layer in the device region when the flat sapphire substrate was used with a dislocation value of > 109 cm−2. We showed the high-temperature crystal growth of AlN with a temperature of 1700 °C by high temperature and gas flow velocity MOVPE. The achieved dislocation density was ~ 4 × 108 cm−2. Additionally, this data means the low dislocation densities in the AlN layer with a growth time of only 15 min and a dislocation density of < 1 × 109 cm−2 are obtained. The AlN growth temperature exceeding 1550 °C decreases the growth rate. These results indicate desorption from the surface of the substrate in a hydrogen atmosphere. Furthermore, the characteristic dislocation behavior of AlN in high-temperature growth at 1700 °C was elucidated from TEM images

A case study of outlier event on solar irradiance forecasts from the two NWPs with different horizontal resolutions

Photovoltaic (PV) power generation is directly effected by global horizontal irradiance (GHI) and has also large variations in spatial and/or temporal scales. For a safety control of an energy management system (EMS), a day-ahead forecast or several hour forecast of solar irradiance by a numerical weather prediction model (NWP) becomes important for a control of reserve capacity (thermal power generation, etc.). In particular, a large forecast error of PV power and/or GHI forecasts has to be prevented in the EMS. The Japan Meteorological Agency (JMA) developed two NWPs with different horizontal resolutions. First one is a mesoscale model with horizontal grid spacing of 5 km and second one is a local forecast model with that of 2 km. The two NWPs have been used as an operational model in JMA. In this study, GHI forecasts obtained from the two models are validated and conducted a case study for large forecast error (outlier events) case of GHI