Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications

This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2

Study on measurement-accuracy improvement method using electromagnetic-wave absorbers

identifier:oai:t2r2.star.titech.ac.jp:5068509

300GHz帯電波反射体の研究開発

identifier:oai:t2r2.star.titech.ac.jp:5068511