33 research outputs found
CALIBRATION OF 2-DOF PARALLEL MECHANISM
Abstract In order to avoid some drawbacks of traditional Coordinate measuring machine (CMM) based on serial mechanism, we are developing Parallel-CMM based on a parallel mechanism. We have already built the prototype of 3-DOF Parallel CMM and now we are researching about the calibration of our Parallel CMM. When we use a CMM to measure the objects, we need to calibrate the geometrical parameters of the CMM to evaluate the uncertainty of measurement. In this paper, we discuss the details of calibration for 2-DOF parallel mechanism instead of 3-DOF parallel mechanism
Far-Infrared Spectroscopy in Spin-Peierls Compound CuGeO_3 under High Magnetic Fields
Polarized far-infrared (FIR) spectroscopic measurements and FIR
magneto-optical studies were performed on the inorganic spin-Peierls compound
CuGeO_3. An absorption line, which was found at 98 cm in the dimerized
phase (D phase), was assigned to a folded phonon mode of B symmetry. The
splitting of the folded mode into two components in the incommensurate phase
(IC phase) has been observed for the first time. A new broad absorption
centered at 63 cm was observed only in the axis
polarization, which was assigned to a magnetic excitation from singlet ground
state to a continuum state.Comment: 9 pages multicolREVTeX, 10 figure
Spin-phonon coupled modes in the incommensurate phases of doped CuGeO
The doping effect of the folded phonon mode at 98 cm was investigated
on the Si-doped CuGeO by magneto-optical measurements in far-infrared (FIR)
region under high magnetic field. The folded phonon mode at 98 cm
appears not only in the dimerized (D) phase but also in the
dimerized-anitiferromagnetic (DAF) phase on the doped CuGeO. The splitting
was observed in the incommensurate (IC) phase and the antiferromagnetically
ordered incommensurate (IAF) phase above . The split-off branches exhibit
different field dependence from that of the pure CuGeO in the vicinity of
, and the discrepancy in the IAF phase is larger than that in the IC
phase. It is caused by the interaction between the solitons and the impurities.Comment: 7 pages, 4 figures, resubmitted to Phys. Rev.
Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double
heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness
between 0-1200 \AA. A negative differential resistance (NDR) is observed for
all DHETs with GaSb thickness 60 \AA below which a dramatic change in the
shape of the I-V and a marked hysteresis is observed. The temperature
dependence of the I-V is found to be very strong below this critical GaSb
thickness. The I-V characteristics of selected DHETs are also presented under
hydrostatic pressures up to 11 kbar. Finally, a mid infra-red
electroluminescence is observed at 1 bar with a threshold at the NDR valley
bias. The band profile calculations presented in the analysis are markedly
different to those given in the literature, and arise due to the positive
charge that it is argued will build up in the GaSb layer under bias. We
conclude that the dominant conduction mechanism in DHETs is most likely to
arise out of an inelastic electron-heavy-hole interaction similar to that
observed in single heterojunctions (SHETs) with 'GaAs like' interface bonding,
and not out of resonant electron-light-hole tunnelling as proposed by Yu et al.
A Zener tunnelling mechanism is shown to contribute to the background current
beyond NDR.Comment: 8 pages 12 fig
Possible Phase Transition Deep Inside the Hidden Order Phase of Ultraclean URu2Si2
To elucidate the underlying nature of the hidden order (HO) state in
heavy-fermion compound URu2Si2, we measure electrical transport properties of
ultraclean crystals in a high field/low temperature regime. Unlike previous
studies, the present system with much less impurity scattering resolves a
distinct anomaly of the Hall resistivity at H*=22.5 T well below the
destruction field of the HO phase ~36 T. In addition, a novel quantum
oscillation appears above a magnetic field slightly below H*. These results
indicate an abrupt reconstruction of the Fermi surface, which implies a
possible phase transition well within the HO phase caused by a band-dependent
destruction of the HO parameter. The present results definitely indicate that
the HO transition should be described by an itinerant electron picture.Comment: 4 pages, 4 figures, accepted for publication in Physical Review
Letter
Field-Induced Magnetic Ordering in the Quantum Spin System KCuCl
KCuCl is a three-dimensional coupled spin-dimer system and has a singlet
ground state with an excitation gap K. High-field
magnetization measurements for KCuCl have been performed in static magnetic
fields of up to 30 T and in pulsed magnetic fields of up to 60 T. The entire
magnetization curve including the saturation region was obtained at K.
From the analysis of the magnetization curve, it was found that the exchange
parameters determined from the dispersion relations of the magnetic excitations
should be reduced, which suggests the importance of the renormalization effect
in the magnetic excitations. The field-induced magnetic ordering accompanied by
the cusplike minimum of the magnetization was observed as in the isomorphous
compound TlCuCl. The phase boundary was almost independent of the field
direction, and is represented by the power law. These results are consistent
with the magnon Bose-Einstein condensation picture for field-induced magnetic
ordering.Comment: 9 pages, 7 figures, 9 eps files, revtex styl
Electron Spin Polarization in Resonant Interband Tunneling Devices
We study spin-dependent interband resonant tunneling in double-barrier
InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be
used as spin filters utilizing spin-selective tunneling of electrons through
the light-hole resonant channel. High densities of the spin polarized electrons
injected into bulk InAs make spin resonant tunneling devices a viable
alternative for injecting spins into a semiconductor. Another striking feature
of the proposed devices is the possibility of inducing additional resonant
channels corresponding to the heavy holes. This can be implemented by
saturating the in-plane magnetization in the quantum well.Comment: 11 pages, 4 eps figure