511 research outputs found
Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices
Interest in transistor-based ferroelectric memory (FeFET) using ferroelectric HfO2[1] as a candidate for nextgeneration memory devices has been growing, and FeFETs with a three-dimensional stacked structure (3DFeFET) have been proposed[2]. Recently, amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O have been mentioned as a candidate channel material, and it is expected to suppress the characteristic degradation caused by the formation of interface layers, which is a problem with Si-based materials [3]. deposition (ALD) technology is required to apply AOS to 3D-FeFETs. Conventional AOS are mainly quaternary, and have been designed for display applications that require low-temperature deposition.
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人工培地上でのアスパラガスの頂芽及び側芽由来の雌雄小植物体の発根
Treatments to promote in vitro rooting of shoots derived from apices and lateral buds of male and female asparagus plants were studied. Effects of phytohormones, NAA and BA, IBA and Rootone (0.4% α-naphthylacetoamide) were evaluated. Apices and lateral buds placed on MS basal medium +0.3mg・l-1NAA and 0.1mg・ I-1lBA as a root-initiation medium for 0, 2 , 3 and 4 weeks followed by transfer to MS basal medium indicated that two or three weeks treatment was the most effective on rooting of mlale lateral buds and female apices. Apices and lateral buds were also placed on MS medium containing 0. 0.01, 0.1, 1,0 and 10.0mg・l-1 of IBA. Seventy % of male lateral shoots rooted on MS medium +1 mgl-1IBA, but it was ineffective for female shoots. Rootone was the most effective on rootin of lateral shoots, irrespective of sexes, but ineffective on apical shoots
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