An introduction to InP-based generic integration technology

Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets. Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology

An introduction to InP-based generic integration technology

Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets.Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.Funding is acknowledged by the EU-projects ePIXnet, EuroPIC and PARADIGM and the Dutch projects NRC Photonics, MEMPHIS, IOP Photonic Devices and STW GTIP. Many others have contributed and the authors would like to thank other PARADIGM and EuroPIC partners for their help in discussions, particularly Michael Robertson (CIP).This is the final published version distributed under a Creative Commons Attribution License. It can also be viewed on the publisher's website at: http://iopscience.iop.org/0268-1242/29/8/08300

Integrated mode-locked inP based lasers for fourier transform spectroscopy

In this paper we present our recent progress on 2.5 GHz mode-locked, quantum well lasers operating at 1550 nm. Two such lasers are monolithically integrated on an InP substrate. Stable passive and hybrid mode-locking of both lasers operating at the same time with a small repetition rate difference is demonstrated

Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm

In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 mum. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic vapor-phase epitaxy

Mode-locked lasers in InP photonic integrated circuits

In this paper an overview is presented of results obtained with mode-locked semiconductor laser systems that are monolithically integrated using a standardized photonic integration platform based on InP. The laser systems are operating around 1550nm. In this technology platform the basic components that form the laser circuits such as amplifiers, passive waveguides and filters, as well as the semiconductor processing are standardized. Several of the possibilities that such a standardized technology offer are demonstrated by a number of examples of realized devices such as low repetition rate mode-locked lasers, a stabilized comb system and a wide frequency comb source. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Monolithically integrated InP-based modelocked ring laser systems

In this paper we report on the progress in the development of modelocked ring lasers that are integrated on a single chip in the InP/InGaAsP material system. With the current optical integration technology it is possible to integrate quantum well optical amplifiers, phase modulators and passive optical components such as waveguides, splitters and spectral filters as standardized building blocks on a single chip. Using such standardized components a number of passively modelocked ring laser devices have been realized in a standardized fabrication process. Results from a few of these devices are presented here. We have observed a record width of the frequency comb from a modelocked quantum well ring laser operating at a 20 GHz repetition rate. The optical coherent comb is centered around 1542 nm and has a 3 dB bandwidth of 11.5 nm. A minimum pulse width of 900 fs was observed. A second device that is highlighted is a modelocked ring laser with a 2.5 GHz repetition rate. Its 33 mm long cavity is fitted onto a chip of 2.2x1.9 mm2. One of the goals of this work is to make such designs available in device libraries for use in more complex integrated optical systems using standardized technology platforms. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only