54 research outputs found
Experimental probing of the anisotropy of the empty p states near the Fermi level in MgB2
We have studied the Boron K-edge in the superconductor MgB2 by electron
energy loss spectroscopy (EELS) and experimentally resolved the empty p states
at the Fermi level that have previously been observed within an energy window
of 0.8eV by soft x-ray absorption spectroscopy. Using angular resolved EELS, we
find that these states at the immediate edge onset have pxy character in
agreement with predictions from first-principle electronic structure
calculations.Comment: 15 pages, 5 figure
Defect Structure of the High-Dielectric-Constant Perovskite Cacu3ti4o12
Using transmission electron microscopy (TEM) we studied CaCu3Ti4O12, an
intriguing material that exhibits a huge dielectric response, up to kilohertz
frequencies, over a wide range of temperature. Neither in single crystals, nor
in polycrystalline samples, including sintered bulk- and thin-films, did we
observe the twin domains suggested in the literature. Nevertheless, in the
single crystals, we saw a very high density of dislocations with a Burger
vector of [110], as well as regions with cation disorder and planar defects
with a displacement vector 1/4[110]. In the polycrystalline samples, we
observed many grain boundaries with oxygen deficiency, in comparison with the
grain interior. The defect-related structural disorders and inhomogeneity,
serving as an internal barrier layer capacitance (IBLC) in a semiconducting
matrix, might explain the very large dielectric response of the material. Our
TEM study of the structure defects in CaCu3Ti4O12 supports a recently proposed
morphological model with percolating conducting regions and blocking regions.Comment: To be published in Physical Review B 21 pages, 8 figure
Accurate determination of domain boundary orientation in LaNbO 4
Abstract The orientation relationship between ferroelastic domains in LaNbO 4 (with 0.5 at.% Sr) is studied by selected area electron diffraction and high-resolution electron microscopy. At room temperature the domains are related through a simple rotation of approximately 95°about the monoclinic [0 1 0] axis, and the interface between two adjacent domains is highly ordered. The domain boundary is found to be the (2 0 À5.10)/(5.10 0 2) planes of the two domains, in excellent agreement with our theoretical predictions. This orientation differs considerably from that predicted by more elaborate ferroelastic theory
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An Interferometric Electron Ruler With Picometer Accuracy in Gauaging Lattice Displacement.
We report a novel technique to accurately measure interfacial lattice displacement by forming an electron probe close to a specimen in a manner similar to that originally proposed by Gabor to record a hologram. This method is based on the quantitative analysis of the interference pattern of shadow images in coherent electron diffraction. The approach is unique in that there are no adjustable microscope parameters, the contrast is strong even when the fault is viewed edge-on, and a large number of shadow images of the fault corresponding to different Bragg reflections can be studied simultaneously. Since it is an interferometric technique, the spatial resolution of the measurement is not limited by the wave length of the fast electrons. 1pm accuracy has been demonstrated in measuring the displacement associated stacking faults and grain boundaries in Bi-based superconductors. It is, to our knowledge, the highest that has been ever achieved in measurements of displacement vectors
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