3 research outputs found
Organic One-Transistor-Type Nonvolatile Memory Gated with Thin Ionic Liquid-Polymer Film for Low Voltage Operation
As
one of the most emerging next-generation nonvolatile memories,
one-transistor (1T)-type nonvolatile memories are of great attention
due to their excellent memory performance and simple device architecture
suitable for high density memory arrays. In particular, organic 1T-type
memories containing both organic semiconductors and insulators are
further beneficial because of their mechanical flexibility with low
cost fabrication. Here, we demonstrate a new flexible organic 1T-type
memory operating at low voltage. The low voltage operation of a memory
less than 10 V was obtained by employing a polymer gate insulator
solution blended with ionic liquid as a charge storage layer. Ionic
liquid homogeneously dissolved in a thin polyÂ(vinylidene fluoride-<i>co</i>-trifluoroethylene) (PVDF-TrFE) film gave rise to low
voltage operation of a device due to its high capacitance. Simultaneously,
stable charge trapping of either anions or cations efficiently occurred
in the polymer matrix, dependent upon gate bias. Optimization of ionic
liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible
organic 1T-type nonvolatile memory operating at programming voltage
of ±7 V with large ON/OFF current margin of approximately 10<sup>3</sup>, reliable time-dependent data retention of more than 10<sup>4</sup> seconds, and write/read endurance cycles of 80
Electrically Tunable Soft-Solid Block Copolymer Structural Color
One-dimensional photonic crystals based on the periodic stacking of two different dielectric layers have been widely studied, but the fabrication of mechanically flexible polymer structural color (SC) films, with electro-active color switching, remains challenging. Here, we demonstrate free-standing electric field tunable ionic liquid (IL) swollen block copolymer (BCP) films. Placement of a polymer/ionic liquid film-reservoir adjacent to a self-assembled poly(styrene-<i>block</i>-quaternized 2-vinylpyridine) (PS-<i>b</i>-QP2VP) copolymer SC film allowed the development of red (R), green (G), and blue (B) full-color SC block copolymer films by swelling of the QP2VP domains by the ionic liquid associated with water molecules. The IL–polymer/BCP SC film is mechanically flexible with excellent color stability over several days at ambient conditions. The selective swelling of the QP2VP domains could be controlled by both the ratio of the IL to a polymer in the gel-like IL reservoir layer and by an applied voltage in the range of −3 to +6 V using a metal/IL reservoir/SC film/IL reservoir/metal capacitor type device
Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Memristive Devices
Solid-state devices
made from correlated oxides, such as perovskite
nickelates, are promising for neuromorphic computing by mimicking
biological synaptic function. However, comprehending dopant action
at the nanoscale poses a formidable challenge to understanding the
elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium
nickel oxide (H-NdNiO3, H-NNO), devices and reveal how
an applied field perturbs dopant distribution at the nanoscale. This
perturbation leads to stripe phases of varying conductivity perpendicular
to the applied field, which define the macroscale electrical characteristics
of the devices. Hyperspectral nano-FTIR imaging in conjunction with
density functional theory calculations unveils a real-space map of
multiple vibrational states of H-NNO associated with OH stretching
modes and their dependence on the dopant concentration. Moreover,
the localization of excess charges induces an out-of-plane lattice
expansion in NNO which was confirmed by in situ X-ray
diffraction and creates a strain that acts as a barrier against further
diffusion. Our results and the techniques presented here hold great
potential for the rapidly growing field of memristors and neuromorphic
devices wherein nanoscale ion motion is fundamentally responsible
for function