Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction

Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p–n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p–n junction of the device is made with different non-intentionally doped (nid) SL structures. The SL photodiode processed shows a cut-off wavelength at 4.65 μm at 77 K, residual carrier concentration equal to 1.75 × 1015 cm−3, dark current density as low as 2.8 × 10−8 A/cm2 at 50 mV reverse bias and R0A product as high as 2 × 106 Ω cm2. The results obtained demonstrate the possibility to fabricate a SL pin photodiode without intentional doping the pn junction

Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes

We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response measurements: quantum efficiency reaches 23% at λ = 2.1 µm for 1 µm thick structure. Noise under illumination measurements are also reported: noise is limited by the Schottky contribution for reverse bias voltage smaller than 1.2 V. The specific detectivity, estimated for 2p field-of-view and 333 K background temperature, was determined equal to 2.29 x 10^10 Jones for -0,8 V bias voltage and 77 K operating temperature

Influence of the GaSb layer thickness on the properties of InAs/GaSb SL photodiodes

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An overview of the InAs/GaSb infrared detector technology

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InAs/GaSb superlattice pin photodiode: choice of the SL period to enhance the temperature operation in the MWIR domain

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Analysis of electrical and phototelectrical characterizations of InAs/GaSbSuperlattice MWIR photodiodes

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Performances actuelles et perspectives des photodétecteurs à super réseaux InAs/GaSb

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Comparison of the electro-optical performance of MWIR InAs/GaSb superlattice pin photodiodes and FPA with asymmetrical designs

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Photodétecteur à super réseaux InAs/GaSb pour une nouvelle génération de détecteur infrarouge

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