Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application

[EN] Copper-indium gallium disulfide (CIGS) is a good absorber for photovoltaic application. Thin films of CIGS were prepared by spray pyrolysis on glass substrates in the ambient atmosphere. The films were characterized by different techniques, such as structural, morphological, optical and electrical properties of CIGS films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), spectrophotometer and Hall effect, respectively. After optimization, the deposited films structure, grain size, and crystallinity became more important with an increase of annealing time at 370 degrees C for 20 min. Transmission electron microscopy (TEM) analysis shows that the interface sheets are well crystallized and the inter planer distance are 0.25 nm, 0.28 nm, and 0.36 nm. The atomic force microscopy (AFM) observation shows that the grain size and roughness can be tolerated by optimizing the annealing time. The strong absorbance and low transmittance were observed for the prepared films with a suitable energy bandgap about 1.46 eV. The Hall effect measurement system examined that CIGS films exhibited optimal electrical properties, resistivity, carrier mobility, and carrier concentration which were determined to be 4.22 x 10(6) omega cm, 6.18 x 10(2) cm(2) V-1 S-1 and 4.22 x 10(6) cm(-3), respectively. The optoelectronic properties of CIGS material recommended being used for the photovoltaic application.Prof. Bouchaib HARTITI, The Senior Associate at ICTP, is very grateful to ICTP for permanent support. Prof. Mohamed Ebn Touhami, Director of the University Center for Analysis, Expertise, Transfer of Technology and Incubation, Kenitra, Morocco, is very grateful to CUA2TI for financial support. Thanks to Doctor Diogo M.F. Santos for the supervision of Amal Bouich's work during her research in CeFEMA research center. The authors also thank researchers from CeFEMA (IST-ULisboa, Portugal) and CUA2TI (FS-Kenitra Morocco) for their help.Bouich, A.; Hartiti, B.; Ullah, S.; Ullah, H.; Ebn Touhami, M.; Santos, DMF.; Marí, B. (2019). Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application. Applied Physics A. 125(8):1-9. https://doi.org/10.1007/s00339-019-2874-4S191258T. Feurer, P. Reinhard, E. Avancini, B. Bissig, J. Löckinger, P. Fuchs, S. Buecheler, Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications. Prog. Photovolt. Res. Appl. 25(7), 645–667 (2017)A. Zegadi, M.A. Slifkin, M. Djamin, A.E. Hill, R.D. Tomlinson, A photoacoustic study of CuInxGa1− xSe2 alloys. Phys. Status Solidi (A) 133(2), 533–540 (1992)T.H. Sajeesh, A.R. Warrier, C.S. Kartha, K.P. Vijayakumar, Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS. Thin Solid Films 518(15), 4370–4374 (2010)J. Liu, D. Zhuang, H. Luan, M. Cao, M. Xie, X. Li, Preparation of Cu (In, Ga) Se2 thin film by sputtering from Cu (In, Ga) Se2 quaternary target. Progr. Nat. Sci. Mater. Int. 23(2), 133–138 (2013)M.I. Hossain, Fabrication and characterization of CIGS solar cells with In2 S3 buffer layer deposited by PVD technique. Chalcogenide Lett. 9(5), 185–191 (2012)M.A. Mughal, R. Engelken, R. Sharma, Progress in indium (III) sulfide (In2S3) buffer layer deposition techniques for CIS, CIGS, and CdTe-based thin film solar cells. Sol. Energy 120, 131–146 (2015)M. Powalla, M. Cemernjak, J. Eberhardt, F. Kessler, R. Kniese, H.D. Mohring, B. Dimmler, Large-area CIGS modules: Pilot line production and new developments. Sol. Energy Mater Sol. Cells 90(18–19), 3158–3164 (2006)M.E. Calixto, P.J. Sebastian, R.N. Bhattacharya, R. Noufi, Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition. Sol. Energy Mater. Sol. Cells 59(1–2), 75–84 (1999)S. Jung, S. Ahn, J.H. Yun, J. Gwak, D. Kim, K. Yoon, Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique. Curr. Appl. Phys. 10(4), 990–996 (2010)S. R. Ovshinsky, X. Deng, R. Young, U.S. Patent No. 5,231,047. Washington, DC: U.S. Patent and Trademark Office (1993).M. Kaelin, D. Rudmann, A.N. Tiwari, Low cost processing of CIGS thin film solar cells. Sol. Energy 77(6), 749–756 (2004)Fangdan Jiang, Jiayou Feng, Effect of temperature on selenization process of metallic Cu–In alloy precursors. Thin Solid Films 515(4), 1950–1955 (2006)S. Shirakata, Y. Kannaka, H. Hasegawa, T. Kariya, S. Isomura, Properties of Cu (In, Ga) Se2 thin films prepared by chemical spray pyrolysis. Jpn. J. Appl. Phys. 38(9R), 4997 (1999)Y.K. Kumar, G.S. Babu, P.U. Bhaskar, V.S. Raja, Effect of starting-solution pH on the growth of Cu2ZnSnS4 thin films deposited by spray pyrolysis. Phys. Status Solidi (A) 206(7), 1525–1530 (2009)M. Ajili, M. Castagné, N.K. Turki, Characteristics of CuIn1− xGaxS2 thin films synthesized by chemical spray pyrolysis. J. Lumin. 150, 1–7 (2014)B.J. Babu, S. Velumani, A. Kassiba, R. Asomoza, J.A. Chavez-Carvayar, J. Yi, Deposition and characterization of graded Cu (In1-xGax) Se2 thin films by spray pyrolysis. Mater. Chem. Phys. 162, 59–68 (2015)S.F. Varol, G. Babür, G. Çankaya, U. Kölemen, Synthesis of sol–gel derived nano-crystalline ZnO thin films as TCO window layer: effect of sol aging and boron. RSC Adv. 4(100), 56645–56653 (2014)J.A. Frantz, R.Y. Bekele, V.Q. Nguyen, J.S. Sanghera, A. Bruce, S.V. Frolov, I.D. Aggarwal, Cu (In, Ga) Se2 thin films and devices sputtered from a single target without additional selenization. Thin Solid Films 519(22), 7763–7765 (2011)C. Calderón, G. Gordillo, P. Bartolo-Pérez, F. Mesa, Effect of the deposition conditions on the optical, morphological and compositional properties of CuIn1− xGaxSe2 thin films prepared by a multistage process. Revista Mexicana de Física 53(7), 270–273 (2007)D. Schmid, M. Ruckh, F. Grunwald, H.W. Schock, Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2. J. Appl. Phys. 73(6), 2902–2909 (1993)U.C. Matur, S. Akyol, N. Baydoğan, H. Cimenoglu, The optical properties of CIGS thin films derived by sol-gel dip coating process at different withdrawal speed. Proc. Soc. Behav. Sci. 195, 1762–1767 (2015)A. Bouich, B. Hartiti, S. Ullah, M.E. Touhami, B. Mari, D.M.F. Santos, Investigation of the optical properties of CuIn (Se, S)2 thin films for photovoltaic application. Mater. Today Proc. 13, 663–669 (2019)K. Matsumura, T. Fujita, H. Itoh, D. Fujita, Characterization of carrier concentration in CIGS solar cells by scanning capacitance microscopy. Meas. Sci. Technol. 25(4), 044020 (2014)A. Bouich, B. Hartiti, S. Ullah, H. Ullah, M.E. Touhami, D.M.F. Santos, B. Mari, Experimental, theoretical, and numerical simulation of the performance of CuInxGa(1–x) S2 based solar cells. Optik 183, 137–147 (2019

Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis

Cu2ZnSnS4 (CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1 mu m. Temperature-dependent conductivity studies revealed the presence of defects such as V-Cu, V-S, V-Sn, Cu-Zn, Zn-Cu, Zn-Sn and Sn-Zn in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has p-type conductivity with a resistivity of 12 Omega cm. A V-Cu-Zn-Cu] defect complex is identified in this sample along with a Zn-Sn acceptor level which is favorable for solar cells