19 research outputs found

    First principles calculations of interlayer exchange coupling in bcc Fe/Cu/Fe structures

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    Induced four fold anisotropy and bias in compensated NiFe/FeMn double layers

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    A vector spin model is used to show how frustrations within a multisublattice antiferromagnet such as FeMn can lead to four-fold magnetic anisotropies acting on an exchange coupled ferromagnetic film. Possibilities for the existence of exchange bias are examined and shown to exist for the case of weak chemical disorder at the interface in an otherwise perfect structure. A sensitive dependence on interlayer exchange is found for anisotropies acting on the ferromagnet through the exchange coupling, and we show that a wide range of anisotropies can appear even for a perfect crystalline structure with an ideally flat interface.Comment: 7 pages, 7 figure

    In-plane magnetic reorientation in coupled ferro- and antiferromagnetic thin films

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    By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy, which may compete with the intrinsic anisotropy of the FM film. Depending on the latter the total in-plane anisotropy of the FM film is either enhanced or reduced. Eventually a change of sign occurs, resulting in an in-plane magnetic reorientation between a collinear and an orthogonal magnetic arrangement of the two subsystems. A canted magnetic arrangement may occur, mediating between these two extremes. By measuring the anisotropy below and above the N\'eel temperature the interlayer exchange coupling can be determined. The calculations have been performed with a Heisenberg-like Hamiltonian by application of a two-spin mean-field theory.Comment: 4 pages, 4 figure

    Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

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    We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as 105Acm2\sim 10^{5} {\rm A cm}^{-2}.Comment: 4 pages, 2 figures, submitted to Rapid Communication

    Theory of tunneling magnetoresistance for epitaxial systems

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