Проблема развития финансовой системы Украины в условиях глобализации

Целью исследования является изучение взаимодействия фондовых рынков Восточной Европе на примере нескольких стран.Метою дослідження є вивчення взаємодії фондових ринків Східної Європи на прикладі декількох країн

Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by high-resolution x-ray diffraction for the structural properties. While two monolayers as-grown LT (250 degrees C) InAs layers exhibit shallow mounds due to the low adatom migration length at low temperature, well-developed InAs dots are formed after postgrowth annealing above 450 degrees C. The structural quality of the LT GaAs matrix grown on top and of the embedded InAs dot layer is improved when a 3 nm GaAs interlayer is deposited (at 480 degrees C) on the InAs dots and subsequently annealed at 580 degrees C before LT GaAs overgrowth. These high structural quality LT-grown InAs dots are considered for applications in high-speed optical modulators and switches operating at low power by combining the high optical nonlinearity of quantum dots with the ultrafast optical response provided by LT growth in MB