3-Acetyl-6-chloro-1-ethyl-4-phenyl­quinolin-2(1H)-one

In the title compound, C19H16ClNO2, the dihedral angle between the plane of the phenyl substituent and 3-acetyl­quinoline unit is 75.44 (5)°. The crystal structure is stabilized by inter­molecular C—H⋯O hydrogen bond

K-Space at TRECVID 2008

In this paper we describe K-Space’s participation in TRECVid 2008 in the interactive search task. For 2008 the K-Space group performed one of the largest interactive video information retrieval experiments conducted in a laboratory setting. We had three institutions participating in a multi-site multi-system experiment. In total 36 users participated, 12 each from Dublin City University (DCU, Ireland), University of Glasgow (GU, Scotland) and Centrum Wiskunde and Informatica (CWI, the Netherlands). Three user interfaces were developed, two from DCU which were also used in 2007 as well as an interface from GU. All interfaces leveraged the same search service. Using a latin squares arrangement, each user conducted 12 topics, leading in total to 6 runs per site, 18 in total. We officially submitted for evaluation 3 of these runs to NIST with an additional expert run using a 4th system. Our submitted runs performed around the median. In this paper we will present an overview of the search system utilized, the experimental setup and a preliminary analysis of our results

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

This paper discusses the fundamentals, applications, potential, limitations, and future perspectives of polarized light reflection techniques for the characterization of materials and related systems and devices at the nanoscale. These techniques include spectroscopic ellipsometry, polarimetry, and reflectance anisotropy. We give an overview of the various ellipsometry strategies for the measurement and analysis of nanometric films, metal nanoparticles and nanowires, semiconductor nanocrystals, and submicron periodic structures. We show that ellipsometry is capable of more than the determination of thickness and optical properties, and it can be exploited to gain information about process control, geometry factors, anisotropy, defects, and quantum confinement effects of nanostructures

In-situ ellipsometry: Identification of surface terminations during GaN growth

Spectroscopic ellipsometry (SE) is used to determine GaN surface termination during growth with metal-organic vapor phase epitaxy (MOVPE) by a correlation to well known results of plasma-assisted molecular beam epitaxy (PAMBE). The results manifest that in MOVPE under typical growth conditions the surface is not terminated by a Ga-bilayer as suggested for MBE. Moreover, it turns out that ellipsometry can be used to characterize the surface reconstruction in wurtzite GaN similar as reflectance anisotropy does for cubic III–V-compounds. The optical spectra for the PAMBE reveal clear differences between growth under Ga-rich and N-rich conditions, which are attributed to the presence of a Ga-bilayer and various N-rich reconstructions on the surface [1]. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</p