The application of legal-statistical method in analysing manufacturing property’s institutional development

Purpose: The study defines the specifics and opportunities, that arise due to the application of statistical method in judicial research of manufacturing property. Design/Methodology/Approach: The authors put the ground of the study on the aggregation of a vast spectrum of statistical data and indicators of patent activity of leading countries in the sphere of technological innovation. Findings: The authors outlined the main tendencies of legal regulation of scientific and artistic results of intellectual property development and define the specifics and opportunities that arise due to the application of statistical method in judicial research of manufacturing property. Lack of coordination of approaches to protect manufacturing property on the international level, obstructs the development of patent activity amongst the members of the Paris Convention and significantly reduces the effectiveness of the current patent system. Practical implications: Authors' development could be utilized in future developments of Russian institute of manufacturing property and its legal framework. Originality/Value: The contribution of the article is the comprehensive analysis of legal background of intellectual property institute and its development prospects.peer-reviewe

RESEARCH OF STATIONARY OPERATING MODES OF THERMOELECTRIC HEATEXCHANGE DEVICES

The necessity of detailed research, relevant consume cal semiconductor heat transfer devices. Distinctive features of thermoelectric devices flow type caused by the change of temperature of streams of coolant along the junctions of termoelectromotoare are identified. Differential equations systems determining the temperature change of the coolants, excluding from them the values of the temperatures of the junctions are used. A mathematical model for parallel flow and counter-flow thermoelectric heat pumps has been constuctucted. A mathematical model of a thermoelectric heat exchanger without any flows of heat in the gaps between the semiconductors has been developed. The cooled and heated liquids temperature dependences at the outlet of the heat exchanger from the heat transfer coefficient to the inner surface of the heat exchanger and reduced heat transfer coefficient from the outer surface of the heat exchanger have been constucted. It is proved that for the same values of heat transfer coefficient to the inner surface of the heat exchanger and reduced heat transfer coefficient from the outer surface of the heat exchanger reducing the temperature of fluid to be cooled significantly more than the increase in the temperature of the heated liquid. The main results obtained by the model are summarized. The analysis is carried out using MathCAD

CRIOTHERMOAPPLICATIONAL THERAPY IN NEUROLOGY WITH THE USE OF THERMOELECTRIC ENERGY CONVERTERS

Aim. The etiology of neurological diseases caused by stress situations and other signs of technological progress is analyzed.Methods. The methods of physical therapy effects on the human body used in therapeutic neurology, which are of high priority because of safety and noninvasiveness are investigated.Results.The necessity of using thermoelectric converters in therapeutic neurology is proved. The design of the semiconductor thermoelectric device for massage with the detailed description of the working principle is suggested. The advantages of the developed design of the device are pointed out, consisting in high environmental safety, noiselessness, reliability, functionality, versatility. The mathematical model of the local thermal effects (criothermoapplicational) and the results of numerical experiment are considered.Conclusion.The possibilities of combining in the device the functions of mechanical massage, heating, cooling, and magnetic effects

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods. The paper provides a comparative analysis of the advantages of bipolar static induction transistor compared to the bipolar power transistors, MOSFETs and insulated-gate bipolar transistor (IGBT). Considered are structural and technological parameters that influence the resistance of BSIT-transistor.Result. As a result of experimental study on silicon substrates were formed test prototypes of BSIT transistor structure, are presented calculation and experimental works. Obtained are the resistance dependencies of the transistor cell on the thickness of the epitaxial film; the resistance dependencies of BSIT transistor cell on the effective gate length for different values of the impurity concentration in the epitaxial film; dependencies resistance of the transistor cell on the gate length at different values of the epitaxial film thickness; the resistance dependencies of BSIT transistor cell on the distance between the mask for the p-region and the gate; dependencies on the multiplication the cell resistance by its area on the gate length.Conclusion. When increasing the gate length (Lk) and the mask length for the p-region (lp +) in the transistor structure, the resistance decreases and the dependence of multiplication of the cell resistance by its area Q on the gate length has this case the minimum

Interband electron Raman scattering in a quantum wire in a transverse magnetic field

Electron Raman scattering (ERS) is investigated in a parabolic semiconductor quantum wire in a transverse magnetic field neglecting by phonon-assisted transitions. The ERS cross-section is calculated as a function of a frequency shift and magnetic field. The process involves an interband electronic transition and an intraband transition between quantized subbands. We analyze the differential cross-section for different scattering configurations. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. The scattering spectrum shows density-of-states peaks and interband matrix elements maximums and a strong resonance when scattered frequency equals to the "hybrid" frequency or confinement frequency depending on the light polarization. Numerical results are presented for a GaAs/AlGaAs quantum wire.Comment: 8 pages, 5 figure

ESPECIALLY SHARING MELTING HEAT STORAGE SYSTEMS AND ADDITIONAL HEAT REMOVAL

In article are considered various constructive options of devices for cooling of radioelectronic devices working in repeated and short-term modes

DIAGNOSIS OF GROUPS OF ELECTRO-RADIO COMPONENTS ACCORDING TO THE TRANSIENT RESPONSES FOR THE DETECTION OF DEFECTS ON THE FUNCTIONAL CELLS

Objectives. A method for diagnosing electronic components with minimally complicated control and measuring instrumentation and the ability to obtain information from internal control points of operating units is developed. Methods. The developed method for control of groups of electronic components presupposes the passage of a controllable influence through a few control points, connected via several electronic components. In addition, each electronic component contributes its share to the transformation of the parameter output, so the discrepancy of its allowable values for the identification of defective electronic component are required to assess the implication of the expected value of the probable defect of each electronic component in the schema with the aim of isolating it. The faulty component in the electronic circuit is identified by the minimum estimated variance, by which the magnitude of the defect will match the expected value of the electronic component parameter. Results. As a result of the control no more than ten groups of electrical components on functional cell matrices can be assessed as having a defective element by comparing the calculated variance values for each electrical component and the corresponding electrical component parameter itself. Conclusion. Diagnosing groups of electric components on transient characteristics for the detection of defects in the functional cell matrices enables efficiency control operations improvement and troubleshooting in the search for modern electronic equipment reliability

MODELING OF THERMOELECTRIC SYSTEM FOR LOCAL THERMAL EFFECTS ON HUMAN FOREARM ZONE

In this paper we consider a model of the thermoelectric system for the thermal effect on the human forearm. The model is implemented on the basis of numerical solution of differentialequations of heat conduction for bodies of complex configuration. Two-dimensional and onedimensional graphs of the temperature change in different zones of the object of exposure aregiven

RESEARCH OF PROCESSES OF HEAT TRANSFER IN THE COOLING SYSTEM ELEMENTS REA, MADE ON THE BASIS OF MELTING HEAT ACCUMULATORS WITH ADDITIONAL LIQUID HEAT SINK

The paper considers the system of cooling elements REA with intermittent by heat, made on the basis of melting heat accumulators with additional liquid heat sink. The basic computational relations for theoretical studies. Presents the dependence of the length of stable work of the REA element in ensuring its temperature conditions of the investigated system

Исследование параметров, влияющих на пробивное напряжение биполярного транзистора со статической индукцией

The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transistor configurations in order to improve the instrument output characteristics and reliability. One of the key electrical parameters characterizing this instrument is breakdown voltage. In p-n junction at specific value of reverse bias the breakdown effect is present that appears as sharp increase of reverse current in p-n junction. For thermal breakdown to occur the thermal self-heating of the structure is necessary. It takes place in case of considerable reverse current in p-n junction. Typically, thermal breakdown happens after tunnel or avalanche breakdown of p-n junction. Breakdown voltage of real diffused p-n junction is defined by value of avalanche breakdown voltage of spherical part of the junction. Thus, breakdown voltage of p-n of junction strongly depends on its geometry.Исследуется структура биполярного транзистора со статической индукцией (БСИТ). Рассмотрены конструктивно-технологические параметры, влияющие на пробивное напряжение ячейки БСИТ. Исследованы и получены зависимости пробивного напряжения от геометрии прибора