9,891 research outputs found

    The Ultraluminous X-ray Sources near the Center of M82

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    We report the identification of a recurrent ultraluminous X-ray source (ULX), a highly absorbed X-ray source (possibly a background AGN), and a young supernova remnant near the center of the starburst galaxy M82. From a series of Chandra observations taken from 1999 to 2005, we found that the transient ULX first appeared in 1999 October. The source turned off in 2000 January, but later reappeared and has been active since then. The X-ray luminosity of this source varies from below the detection level (~2.5e38 erg/s) to its active state in between ~7e39 erg/s and 1.3e40 erg/s (in the 0.5-10 keV energy band) and shows unusual spectral changes. The X-ray spectra of some Chandra observations are best fitted with an absorbed power-law model with photon index ranging from 1.3 to 1.7. These spectra are similar to those of Galactic black hole binary candidates seen in the low/hard state except that a very hard spectrum was seen in one of the observations. By comparing with near infrared images taken with the Hubble Space Telescope, the ULX is found to be located within a young star cluster. Radio imaging indicates that it is associated with a H II region. We suggest that the ULX is likely to be a > 100 solar mass intermediate-mass black hole in the low/hard state. In addition to the transient ULX, we also found a highly absorbed hard X-ray source which is likely to be an AGN and an ultraluminous X-ray emitting young supernova remnant which may be related to a 100-year old gamma-ray burst event, within 2 arcsec of the transient ULX.Comment: 9 pages, 8 figures. Accepted for publication in Ap

    Anisotropic softening of collective charge modes in the vicinity of critical doping in a doped Mott insulator

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    Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd2x_{2-x}Cex_xCuO4_4. As the doping induced AFM-SC (antiferromagnetic-superconducting) transition is approached, we observe an anisotropic softening of collective charge modes over a large energy scale along the Gamma to (\pi,\pi)-direction, whereas the modes exhibit broadening (\sim 1 eV) with relatively little softening along Gamma to (\pi,0) with respect to the parent Mott insulator (x=0). Our study indicates a systematic collapse of the gap consistent with the scenario that the system dopes uniformly with electrons even though the softening of the modes involves an unusually large energy scale.Comment: 5 pages + 5 Figure

    Prenatal transplantation of human amniotic fluid stem cell could improve clinical outcome of type III spinal muscular atrophy in mice

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    Spinal muscular atrophy (SMA) is a single gene disorder affecting motor function in uterus. Amniotic fluid is an alternative source of stem cell to ameliorate SMA. Therefore, this study aims to examine the therapeutic potential of Human amniotic fluid stem cell (hAFSC) for SMA. Our SMA model mice were generated by deletion of exon 7 of Smn gene and knock-in of human SMN2. A total of 16 SMA model mice were injected with 1 × 105 hAFSC in uterus, and the other 16 mice served as the negative control. Motor function was analyzed by three behavioral tests. Engraftment of hAFSC in organs were assessed by flow cytometry and RNA scope. Frequency of myocytes, neurons and innervated receptors were estimated by staining. With hAFSC transplantation, 15 fetuses survived (93.75% survival) and showed better performance in all motor function tests. Higher engraftment frequency were observed in muscle and liver. Besides, the muscle with hAFSC transplantation expressed much laminin α and PAX-7. Significantly higher frequency of myocytes, neurons and innervated receptors were observed. In our study, hAFSC engrafted on neuromuscular organs and improved cellular and behavioral outcomes of SMA model mice. This fetal therapy could preserve the time window and treat in the uterus

    Undetermined states: how to find them and their applications

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    We investigate the undetermined sets consisting of two-level, multi-partite pure quantum states, whose reduced density matrices give absolutely no information of their original states. Two approached of finding these quantum states are proposed. One is to establish the relation between codewords of the stabilizer quantum error correction codes (SQECCs) and the undetermined states. The other is to study the local complementation rules of the graph states. As an application, the undetermined states can be exploited in the quantum secret sharing scheme. The security is guaranteed by their undetermineness.Comment: 6 pages, no figur

    Insulating behavior in ultra-thin bismuth selenide field effect transistors

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    Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV

    A Universal Intrinsic Scale of Hole Concentration for High-Tc Cuprates

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    We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl = z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the Cu valency. We find two characteristic scaling temperatures, TS* and TS2*, in the TEP vs. temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; upper pseudogap temperature defined by the TS* versus Ppl curve and lower pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-Tc cuprates, Tc depends on the number of layers, therefore the inter-layer coupling, in each individual system.Comment: 11 pages, 9 figures, accepted for publication in Physical Review
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