Deep defects in Cu2ZnSnS4 monograin solar cells

AbstractIn this report Cu2ZnSnS4 (CZTS) monograin layer (MGL) solar cells were studied using admittance spectroscopy (AS) (frequency range 20Hz-10MHz) and temperature dependence of quantum efficiency (QE) curves (T=10K-300K). These studies revealed two deep defect states at EA1= 120 meV and at EA2= 167 meV. The first state was present in different CZTS cells while the second state had somewhat different properties in different cells. The temperature dependence of QE curves showed a shift of the long wavelength edge with increasing temperature by about 110 meV towards higher energy. The possible origin of the observed deep defect states is discussed

Development of Bi2S3 thin film solar cells by close-spaced sublimation and analysis of absorber bulk defects via in-depth photoluminescence analysis

This study was funded by the Estonian Research Council projects PSG689 “Bismuth Chalcogenide Thin-Film Disruptive Green Solar Technology for Next Generation Photovoltaics”, PRG627 “Antimony chalcogenide thin films for next-generation semi-transparent solar cells applicable in electricity producing windows”, and PRG1023; the Estonian Centre of Excellence project TK141 (TAR16016EK, TAR16016) “Advanced materials and high-technology devices for energy recuperation systems”, and the European Union's H2020 programme under the ERA Chair project 5GSOLAR grant agreement No 952509.The emergence of new PV applications in society requires the design of new materials and devices based on green and earth-abundant elements, with a different set of properties and wider applicability. In this perspective, Bi2S3 semiconductor material have gained attention as a defect-tolerant, non-toxic, and highly stable material for earth-abundant thin film PV technologies. Related to Bi2S3 non-toxic nature, so far it has been very popular to synthesize the material by chemical solution routes, while little research efforts have been dedicated to absorber deposition by physical deposition techniques. In particular, there are no studies on absorber development via rapid, high-volume, and in-line close-spaced sublimation technique. Moreover, in-depth analysis of material defects employing low temperature-dependent photoluminescence (PL) remains largely unexplored. In this work, we systematically study the impact of close-spaced sublimation (CSS) conditions on Bi2S3 absorber growth on various substrates, employing a wide range of source (400–600 °C) and substrate (200–400 °C) temperatures. CSS source temperature of 550 °C and substrate temperature of 400–450 °C were identified as optimal temperatures (grown either on glass, TiO2, or CdS substrates), allowing the fabrication of uniform and dense Bi2S3 films with enhanced [221]-oriented grains. For the first time, a proof of concept solar cell with CSS Bi2S3 is demonstrated and an in-depth analysis on the interrelation between grain structure, interface recombination, and device performance is provided. Employing low-temperature dependence PL, new and complementary insights on possible defects and recombination mechanisms are presented.--//-- M. Koltsov, S.V. Gopi, T. Raadik, J. Krustok, R. Josepson, R. Gržibovskis, A. Vembris, N. Spalatu, Development of Bi2S3 thin film solar cells by close-spaced sublimation and analysis of absorber bulk defects via in-depth photoluminescence analysis, Solar Energy Materials and Solar Cells, Volume 254, 2023, 112292, ISSN 0927-0248, https://doi.org/10.1016/j.solmat.2023.112292.(https://www.sciencedirect.com/science/article/pii/S0927024823001137) Published under the CC BY-NC-ND licence.Estonian Research Council projects PSG689, PRG627 and PRG1023; Estonian Centre of Excellence project TK141 (TAR16016EK, TAR16016); the European Union's H2020 programme under the ERA Chair project 5GSOLAR grant agreement No 952509; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2

Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition

The energy band structure of Cu2SnS3 (CTS) thin films fabricated by pulsed laser deposition was studied by photoreflectance spectroscopy (PR). The temperature-dependent PR spectra were measured in the range of T = 10–150 K. According to the Raman scattering analysis, the monoclinic crystal structure (C1c1) prevails in the studied CTS thin film; however, a weak contribution from cubic CTS (F-43m) was also detected. The PR spectra revealed the valence band splitting of CTS. Optical transitions at EA = 0.92 eV, EB = 1.04 eV, and EC = 1.08 eV were found for monoclinic CTS at low-temperature (T = 10 K). Additional optical transition was detected at EAC = 0.94 eV, and it was attributed to the low-temperature band gap of cubic CTS. All the identified optical transition energies showed a blueshift with increasing temperature, and the temperature coefficient dE/dT was about 0.1 meV/K

Micro Concentrator Concept for Cost Reduction and Efficiency Enhancement of Thin Film Chalcopyrite Photovoltaics Results from EU Joint Research Program CHEETAH

Results for research on chalcopyrite micro concentrator solar cells obtained within the framework of CHEETAH joint program are shown. A top down proof of concept study reveals close to 30 relative efficiency increase under light concentration using inkjet printed CIGSSe. A novel bottom up approach for local chalcopyrite absorbers grown from indium islands demonstrates working CISe micro cells. Millimeter sized lenses are fabricated from PMMA by a casting process to be applied as concentrator optics. For a combined exploitation of direct and diffuse light components an angular splitting concentrator based on chalcopyrite and kesterite absorber material is proposed. The scientific innovation brought will enrich further development of CIGSe solar cells and contribute to their relevance in photovoltaic energy productio

An assessment of native migratory fish assemblages after construction of multiple fishways in the Maribyrnong River, Victoria

Report to Melbourne Wate

Photoreflectance study of AgGaTe2 single crystals

The optical properties of ternary chalcopyrite AgGaTe2 were studied by photoreflectance spectorscopy (PR). Due to the optimal direct energy gap and high absorption coefficient AgGaTe2 is a promising material for solar energy conversion. Single crystals used in this work were grown by the vertical Bridgman technique. The PR temperature dependent spectra were measured in the range of 25–300 K. At room temperature two energy gaps in AgGaTe2 were detected: and , with temperature coefficients /dT=−2.1×10−4 eV/K and /dT=−3.4×10−4 eV/K. At low temperature (T=25 K) these bandgap energies were and . Temperature dependence of bandgap energies is maximum at about T=90 K

Photoreflectance study of AgGaTe 2 single crystals

a b s t r a c t The optical properties of ternary chalcopyrite AgGaTe 2 were studied by photoreflectance spectorscopy (PR). Due to the optimal direct energy gap and high absorption coefficient AgGaTe 2 is a promising material for solar energy conversion. Single crystals used in this work were grown by the vertical Bridgman technique. The PR temperature dependent spectra were measured in the range of 25-300 K. At room temperature two energy gaps in AgGaTe 2 were detected: