Electrically-induced n-i-p junctions in multiple graphene layer structures

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n- and p-regions in the electrically-induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically-induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectron devices.Comment: 7 pages, 6 figure

Disproportionation and electronic phase separation in parent manganite LaMnO_3

Nominally pure undoped parent manganite LaMnO_3 exhibits a puzzling behavior inconsistent with a simple picture of an A-type antiferromagnetic insulator (A-AFI) with a cooperative Jahn-Teller ordering. We do assign its anomalous properties to charge transfer instabilities and competition between insulating A-AFI phase and metallic-like dynamically disproportionated phase formally separated by a first-order phase transition at T_{disp}=T_{JT}\approx 750 K. The unconventional high-temperature phase is addressed to be a specific electron-hole Bose liquid (EHBL) rather than a simple "chemically" disproportionated R(Mn^{2+}Mn^{4+})O_3 phase. New phase does nucleate as a result of the charge transfer (CT) instability and evolves from the self-trapped CT excitons, or specific EH-dimers, which seem to be a precursor of both insulating and metallic-like ferromagnetic phases observed in manganites. We arrive at highly frustrated system of triplet (e_g^2)^3A_{2g} bosons moving in a lattice formed by hole Mn^{4+} centers. Starting with different experimental data we have reproduced a typical temperature dependence of the volume fraction of high-temperature mixed-valent EHBL phase. We argue that a slight nonisovalent substitution, photo-irradiation, external pressure or magnetic field gives rise to an electronic phase separation with a nucleation or an overgrowth of EH-droplets. Such a scenario provides a comprehensive explanation of numerous puzzling properties observed in parent and nonisovalently doped manganite LaMnO_3 including an intriguing manifestation of superconducting fluctuations.Comment: 20 pages, 8 figure